P

Inventor

ANDO YUJI

JP96 patents
⚠️ This page may combine multiple inventors who share the name “ANDO YUJI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

NEC CORP

28 patents
US6492669B2Dec 10, 2002

Semiconductor device with schottky electrode having high schottky barrier

NEC CORP134 citations98
US6465814B2Oct 15, 2002

Semiconductor device

NEC CORP104 citations98
US6429467B1Aug 6, 2002

Heterojunction field effect transistor

NEC CORP138 citations98
US6765241B2Jul 20, 2004

Group III nitride semiconductor device of field effect transistor type having reduced parasitic capacitances

NEC CORP54 citations96
US6552373B2Apr 22, 2003

Hetero-junction field effect transistor having an intermediate layer

NEC CORP65 citations96
US7973335B2Jul 5, 2011

Field-effect transistor having group III nitride electrode structure

NEC CORP33 citations93
US7800131B2Sep 21, 2010

Field effect transistor

NEC CORP48 citations93
US7256432B2Aug 14, 2007

Field-effect transistor

NEC CORP25 citations93
US5543748AAug 6, 1996

Flip-flop circuit with resonant tunneling diode

NEC CORP22 citations93
US5285081AFeb 8, 1994

Field effect transistor having quasi one-dimensional electron gas confined under electron resonance

NEC CORP23 citations93
US5105241AApr 14, 1992

Field effect transistor

NEC CORP28 citations93
US7863648B2Jan 4, 2011

Field effect transistor

NEC CORP38 citations92
US7859014B2Dec 28, 2010

Semiconductor device

NEC CORP46 citations92
US6441391B1Aug 27, 2002

Semiconductor device having drain and gate electrodes formed to lie along few degrees of direction in relation to the substrate

NEC CORP52 citations92
US6440822B1Aug 27, 2002

Method of manufacturing semiconductor device with sidewall metal layers

NEC CORP19 citations92
US7985984B2Jul 26, 2011

III-nitride semiconductor field effect transistor

NEC CORP7 citations84
US7071526B2Jul 4, 2006

Semiconductor device having Schottky junction electrode

NEC CORP13 citations84
US5621228AApr 15, 1997

Heterojunction field effect transistor with non-alloy ohmic contact electrodes

NEC CORP18 citations84
US6034386AMar 7, 2000

Field effect transistor and method of manufacturing the same

NEC CORP15 citations74
US5920231AJul 6, 1999

Negative differential resistance amplifier

NEC CORP13 citations74
US5705825AJan 6, 1998

Resonant tunneling bipolar transistor

NEC CORP14 citations74
US5548139AAug 20, 1996

Schottky gate field effect transistor

NEC CORP11 citations74
US5373168ADec 13, 1994

Two-dimensional electron gas field effect transistor including an improved InGaAs channel layer

NEC CORP18 citations74
US5371387ADec 6, 1994

Field effect transistors

NEC CORP11 citations74
US5192986AMar 9, 1993

Heterojunction field effect transistor equipped with electrostatic lens for improving ballistic propagation

NEC CORP8 citations74
US5138408AAug 11, 1992

Resonant tunneling hot carrier transistor

NEC CORP19 citations74
US4982356AJan 1, 1991

Multiple-valued current mode adder implemented by transistor having negative transconductance

NEC CORP12 citations74
US4907045AMar 6, 1990

Resonant-tunneling functional device using multiple negative differential resistances

NEC CORP11 citations74

SONY CORP

10 patents

ANDO YUJI

3 patents

CHISSO CORP

3 patents

OKAMOTO YASUHIRO

2 patents

SHINETSU CHEMICAL CO

2 patents

INOUE TAKASHI

1 patent

RENESAS ELECTRONICS CORP

1 patent

Showing the top 50 of 96 patents by PatentIndex Score.