Inventor
MIYAMOTO HIRONOBU
JP92 patents
⚠️ This page may combine multiple inventors who share the name “MIYAMOTO HIRONOBU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
NEC CORP
18 patentsUS6492669B2Dec 10, 2002
Semiconductor device with schottky electrode having high schottky barrier
NEC CORP134 citations98
US6465814B2Oct 15, 2002
Semiconductor device
NEC CORP104 citations98
US6765241B2Jul 20, 2004
Group III nitride semiconductor device of field effect transistor type having reduced parasitic capacitances
NEC CORP54 citations96
US6552373B2Apr 22, 2003
Hetero-junction field effect transistor having an intermediate layer
NEC CORP65 citations96
US7973335B2Jul 5, 2011
Field-effect transistor having group III nitride electrode structure
NEC CORP33 citations93
US7800131B2Sep 21, 2010
Field effect transistor
NEC CORP48 citations93
US7256432B2Aug 14, 2007
Field-effect transistor
NEC CORP25 citations93
US7863648B2Jan 4, 2011
Field effect transistor
NEC CORP38 citations92
US7859014B2Dec 28, 2010
Semiconductor device
NEC CORP46 citations92
US6534790B2Mar 18, 2003
Compound semiconductor field effect transistor
NEC CORP28 citations92
US6440822B1Aug 27, 2002
Method of manufacturing semiconductor device with sidewall metal layers
NEC CORP19 citations92
US6441391B1Aug 27, 2002
Semiconductor device having drain and gate electrodes formed to lie along few degrees of direction in relation to the substrate
NEC CORP52 citations92
US7985984B2Jul 26, 2011
III-nitride semiconductor field effect transistor
NEC CORP7 citations84
US7071526B2Jul 4, 2006
Semiconductor device having Schottky junction electrode
NEC CORP13 citations84
US6235626B1May 22, 2001
Method of forming a gate electrode using an insulating film with an opening pattern
NEC CORP16 citations84
US5635735AJun 3, 1997
Field effect transistor with an improved Schottky gate structure
NEC CORP10 citations74
US4942438AJul 17, 1990
Compound semiconductor field-effect transistor
NEC CORP9 citations74
US8344422B2Jan 1, 2013
Semiconductor device
NEC CORP5 citations73
RENESAS ELECTRONICS CORP
17 patentsUS9559183B2Jan 31, 2017
Semiconductor device with varying thickness of insulating film between electrode and gate electrode and method of manufacturing semiconductor device
RENESAS ELECTRONICS CORP14 citations92
US9520489B2Dec 13, 2016
Semiconductor device
RENESAS ELECTRONICS CORP6 citations84
US9306027B2Apr 5, 2016
Semiconductor device and a method for manufacturing a semiconductor device
RENESAS ELECTRONICS CORP13 citations84
US9306051B2Apr 5, 2016
Semiconductor device using a nitride semiconductor
RENESAS ELECTRONICS CORP9 citations84
US10050142B2Aug 14, 2018
Semiconductor device and a method for manufacturing a semiconductor device
RENESAS ELECTRONICS CORP5 citations83
US10199476B2Feb 5, 2019
Semiconductor device and manufacturing method of semiconductor device
RENESAS ELECTRONICS CORP3 citations73
US10109730B2Oct 23, 2018
Semiconductor device and manufacturing method thereof
RENESAS ELECTRONICS CORP2 citations73
US10014403B2Jul 3, 2018
Semiconductor device
RENESAS ELECTRONICS CORP2 citations73
US9984884B2May 29, 2018
Method of manufacturing semiconductor device with a multi-layered gate dielectric
RENESAS ELECTRONICS CORP3 citations73
US9978642B2May 22, 2018
III-V nitride semiconductor device having reduced contact resistance
RENESAS ELECTRONICS CORP2 citations73
US8963207B2Feb 24, 2015
Semiconductor device
RENESAS ELECTRONICS CORP4 citations73
US9954087B2Apr 24, 2018
Field effect transistor, and multilayered epitaxial film for use in preparation of field effect transistor
RENESAS ELECTRONICS CORP5 citations72
US9722062B2Aug 1, 2017
Semiconductor device and a method for manufacturing a semiconductor device
RENESAS ELECTRONICS CORP4 citations72
US9536978B2Jan 3, 2017
Semiconductor device
RENESAS ELECTRONICS CORP2 citations71
US10388779B2Aug 20, 2019
Semiconductor device and manufacturing method thereof
RENESAS ELECTRONICS CORP1 citations63
US10243070B2Mar 26, 2019
Semiconductor device and method for manufacturing the same
RENESAS ELECTRONICS CORP1 citations63
US9070661B2Jun 30, 2015
Semiconductor device including a strain relaxation film
RENESAS ELECTRONICS CORP3 citations63
INOUE TAKASHI
3 patentsUS8853666B2Oct 7, 2014
Field effect transistor, and multilayered epitaxial film for use in preparation of field effect transistor
INOUE TAKASHI26 citations92
US8716755B2May 6, 2014
Semiconductor device and method for manufacturing the same
INOUE TAKASHI5 citations73
US8674409B2Mar 18, 2014
Heterojunction field effect transistor, method for producing heterojunction field effect transistor, and electronic device
INOUE TAKASHI2 citations63
ANDO YUJI
2 patentsOKAMOTO YASUHIRO
2 patentsMASUO YOKO
2 patentsTOSHIBA MEMORY CORP
1 patentYANO HIROKUNI
1 patentMIYAMOTO HIRONOBU
1 patentRenesas Electronics Electronics
1 patentOTA KAZUKI
1 patentYAMANAKA TAICHIRO
1 patentShowing the top 50 of 92 patents by PatentIndex Score.