P

Inventor

MIYAMOTO HIRONOBU

JP92 patents
⚠️ This page may combine multiple inventors who share the name “MIYAMOTO HIRONOBU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

NEC CORP

18 patents
US6492669B2Dec 10, 2002

Semiconductor device with schottky electrode having high schottky barrier

NEC CORP134 citations98
US6465814B2Oct 15, 2002

Semiconductor device

NEC CORP104 citations98
US6765241B2Jul 20, 2004

Group III nitride semiconductor device of field effect transistor type having reduced parasitic capacitances

NEC CORP54 citations96
US6552373B2Apr 22, 2003

Hetero-junction field effect transistor having an intermediate layer

NEC CORP65 citations96
US7973335B2Jul 5, 2011

Field-effect transistor having group III nitride electrode structure

NEC CORP33 citations93
US7800131B2Sep 21, 2010

Field effect transistor

NEC CORP48 citations93
US7256432B2Aug 14, 2007

Field-effect transistor

NEC CORP25 citations93
US7863648B2Jan 4, 2011

Field effect transistor

NEC CORP38 citations92
US7859014B2Dec 28, 2010

Semiconductor device

NEC CORP46 citations92
US6534790B2Mar 18, 2003

Compound semiconductor field effect transistor

NEC CORP28 citations92
US6440822B1Aug 27, 2002

Method of manufacturing semiconductor device with sidewall metal layers

NEC CORP19 citations92
US6441391B1Aug 27, 2002

Semiconductor device having drain and gate electrodes formed to lie along few degrees of direction in relation to the substrate

NEC CORP52 citations92
US7985984B2Jul 26, 2011

III-nitride semiconductor field effect transistor

NEC CORP7 citations84
US7071526B2Jul 4, 2006

Semiconductor device having Schottky junction electrode

NEC CORP13 citations84
US6235626B1May 22, 2001

Method of forming a gate electrode using an insulating film with an opening pattern

NEC CORP16 citations84
US5635735AJun 3, 1997

Field effect transistor with an improved Schottky gate structure

NEC CORP10 citations74
US4942438AJul 17, 1990

Compound semiconductor field-effect transistor

NEC CORP9 citations74
US8344422B2Jan 1, 2013

Semiconductor device

NEC CORP5 citations73

RENESAS ELECTRONICS CORP

17 patents
US9559183B2Jan 31, 2017

Semiconductor device with varying thickness of insulating film between electrode and gate electrode and method of manufacturing semiconductor device

RENESAS ELECTRONICS CORP14 citations92
US9520489B2Dec 13, 2016

Semiconductor device

RENESAS ELECTRONICS CORP6 citations84
US9306027B2Apr 5, 2016

Semiconductor device and a method for manufacturing a semiconductor device

RENESAS ELECTRONICS CORP13 citations84
US9306051B2Apr 5, 2016

Semiconductor device using a nitride semiconductor

RENESAS ELECTRONICS CORP9 citations84
US10050142B2Aug 14, 2018

Semiconductor device and a method for manufacturing a semiconductor device

RENESAS ELECTRONICS CORP5 citations83
US10199476B2Feb 5, 2019

Semiconductor device and manufacturing method of semiconductor device

RENESAS ELECTRONICS CORP3 citations73
US10109730B2Oct 23, 2018

Semiconductor device and manufacturing method thereof

RENESAS ELECTRONICS CORP2 citations73
US10014403B2Jul 3, 2018

Semiconductor device

RENESAS ELECTRONICS CORP2 citations73
US9984884B2May 29, 2018

Method of manufacturing semiconductor device with a multi-layered gate dielectric

RENESAS ELECTRONICS CORP3 citations73
US9978642B2May 22, 2018

III-V nitride semiconductor device having reduced contact resistance

RENESAS ELECTRONICS CORP2 citations73
US8963207B2Feb 24, 2015

Semiconductor device

RENESAS ELECTRONICS CORP4 citations73
US9954087B2Apr 24, 2018

Field effect transistor, and multilayered epitaxial film for use in preparation of field effect transistor

RENESAS ELECTRONICS CORP5 citations72
US9722062B2Aug 1, 2017

Semiconductor device and a method for manufacturing a semiconductor device

RENESAS ELECTRONICS CORP4 citations72
US9536978B2Jan 3, 2017

Semiconductor device

RENESAS ELECTRONICS CORP2 citations71
US10388779B2Aug 20, 2019

Semiconductor device and manufacturing method thereof

RENESAS ELECTRONICS CORP1 citations63
US10243070B2Mar 26, 2019

Semiconductor device and method for manufacturing the same

RENESAS ELECTRONICS CORP1 citations63
US9070661B2Jun 30, 2015

Semiconductor device including a strain relaxation film

RENESAS ELECTRONICS CORP3 citations63

INOUE TAKASHI

3 patents

ANDO YUJI

2 patents

OKAMOTO YASUHIRO

2 patents

MASUO YOKO

2 patents

TOSHIBA MEMORY CORP

1 patent

YANO HIROKUNI

1 patent

MIYAMOTO HIRONOBU

1 patent

Renesas Electronics Electronics

1 patent

OTA KAZUKI

1 patent

YAMANAKA TAICHIRO

1 patent

Showing the top 50 of 92 patents by PatentIndex Score.