P

Inventor

LIU CHEN-CHIN

TW39 patents
⚠️ This page may combine multiple inventors who share the name “LIU CHEN-CHIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MACRONIX INT CO LTD

20 patents
US6610586B1Aug 26, 2003

Method for fabricating nitride read-only memory

MACRONIX INT CO LTD146 citations99
US6514831B1Feb 4, 2003

Nitride read only memory cell

MACRONIX INT CO LTD157 citations99
US6468864B1Oct 22, 2002

Method of fabricating silicon nitride read only memory

MACRONIX INT CO LTD132 citations96
US6617204B2Sep 9, 2003

Method of forming the protective film to prevent nitride read only memory cell charging

MACRONIX INT CO LTD137 citations93
US6930928B2Aug 16, 2005

Method of over-erase prevention in a non-volatile memory device and related structure

MACRONIX INT CO LTD23 citations89
US6191000B1Feb 20, 2001

Shallow trench isolation method used in a semiconductor wafer

MACRONIX INT CO LTD15 citations83
US6501123B2Dec 31, 2002

High gate coupling non-volatile memory structure

MACRONIX INT CO LTD9 citations74
US6909131B2Jun 21, 2005

Word line strap layout structure

MACRONIX INT CO LTD4 citations62
US7403430B2Jul 22, 2008

Erase operation for use in non-volatile memory

MACRONIX INT CO LTD4 citations61
US7183608B2Feb 27, 2007

Memory array including isolation between memory cell and dummy cell portions

MACRONIX INT CO LTD6 citations61
US6576514B2Jun 10, 2003

Method of forming a three-dimensional polysilicon layer on a semiconductor wafer

MACRONIX INT CO LTD5 citations61
US6509231B1Jan 21, 2003

Nitride ready only memory cell with two top oxide layers and the method for manufacturing the same

MACRONIX INT CO LTD4 citations61
US7286396B2Oct 23, 2007

Bit line selection transistor layout structure

MACRONIX INT CO LTD4 citations58
US7064032B2Jun 20, 2006

Method for forming non-volatile memory cell with low-temperature-formed dielectric between word and bit lines, and non-volatile memory array including such memory cells

MACRONIX INT CO LTD3 citations58
US6869843B2Mar 22, 2005

Non-volatile memory cell with dielectric spacers along sidewalls of a component stack, and method for forming same

MACRONIX INT CO LTD2 citations57
US6784053B2Aug 31, 2004

Method for preventing bit line to bit line leakage in memory cell

MACRONIX INT CO LTD5 citations57
US7132302B2Nov 7, 2006

Method of increasing cell retention capacity of silicon nitride read-only-memory cell

MACRONIX INT CO LTD3 citations51
US8354335B2Jan 15, 2013

Apparatus and associated method for making a floating gate cell with increased overlay between the control gate and floating gate

MACRONIX INT CO LTD0 citations47
US7879708B2Feb 1, 2011

Apparatus and associated method for making a floating gate cell with increased overlay between the control gate and floating gate

MACRONIX INT CO LTD0 citations47
US8017480B2Sep 13, 2011

Apparatus and associated method for making a floating gate cell in a virtual ground array

MACRONIX INT CO LTD0 citations37

TAIWAN SEMICONDUCTOR MFG CO LTD

19 patents
US9847399B1Dec 19, 2017

Semiconductor device and a method for fabricating the same

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US9831134B1Nov 28, 2017

Method of manufacturing a semiconductor device having deep wells

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9679909B2Jun 13, 2017

Method for manufacturing a finger trench capacitor with a split-gate flash memory cell

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
US9590059B2Mar 7, 2017

Interdigitated capacitor to integrate with flash memory

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations73
US9570539B2Feb 14, 2017

Integration techniques for MIM or MIP capacitors with flash memory and/or high-κ metal gate CMOS technology

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10741569B2Aug 11, 2020

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US11895836B2Feb 6, 2024

Anti-dishing structure for embedded memory

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11264292B2Mar 1, 2022

Cell-like floating-gate test structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11195834B2Dec 7, 2021

Semiconductor device having deep wells

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11088040B2Aug 10, 2021

Cell-like floating-gate test structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11031294B2Jun 8, 2021

Semiconductor device and a method for fabricating the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12167594B2Dec 10, 2024

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US11430799B2Aug 30, 2022

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US10644000B2May 5, 2020

Semiconductor device having deep wells

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10134644B2Nov 20, 2018

Method of manufacturing a semiconductor device having deep wells

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10049939B2Aug 14, 2018

Semiconductor device and a method for fabricating the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10804281B2Oct 13, 2020

Anti-dishing structure for embedded memory

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10535574B2Jan 14, 2020

Cell-like floating-gate test structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US12376298B2Jul 29, 2025

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50