Inventor
LIU CHEN-CHIN
TW39 patents
⚠️ This page may combine multiple inventors who share the name “LIU CHEN-CHIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MACRONIX INT CO LTD
20 patentsUS6610586B1Aug 26, 2003
Method for fabricating nitride read-only memory
MACRONIX INT CO LTD146 citations99
US6514831B1Feb 4, 2003
Nitride read only memory cell
MACRONIX INT CO LTD157 citations99
US6468864B1Oct 22, 2002
Method of fabricating silicon nitride read only memory
MACRONIX INT CO LTD132 citations96
US6617204B2Sep 9, 2003
Method of forming the protective film to prevent nitride read only memory cell charging
MACRONIX INT CO LTD137 citations93
US6930928B2Aug 16, 2005
Method of over-erase prevention in a non-volatile memory device and related structure
MACRONIX INT CO LTD23 citations89
US6191000B1Feb 20, 2001
Shallow trench isolation method used in a semiconductor wafer
MACRONIX INT CO LTD15 citations83
US6501123B2Dec 31, 2002
High gate coupling non-volatile memory structure
MACRONIX INT CO LTD9 citations74
US6909131B2Jun 21, 2005
Word line strap layout structure
MACRONIX INT CO LTD4 citations62
US7403430B2Jul 22, 2008
Erase operation for use in non-volatile memory
MACRONIX INT CO LTD4 citations61
US7183608B2Feb 27, 2007
Memory array including isolation between memory cell and dummy cell portions
MACRONIX INT CO LTD6 citations61
US6576514B2Jun 10, 2003
Method of forming a three-dimensional polysilicon layer on a semiconductor wafer
MACRONIX INT CO LTD5 citations61
US6509231B1Jan 21, 2003
Nitride ready only memory cell with two top oxide layers and the method for manufacturing the same
MACRONIX INT CO LTD4 citations61
US7286396B2Oct 23, 2007
Bit line selection transistor layout structure
MACRONIX INT CO LTD4 citations58
US7064032B2Jun 20, 2006
Method for forming non-volatile memory cell with low-temperature-formed dielectric between word and bit lines, and non-volatile memory array including such memory cells
MACRONIX INT CO LTD3 citations58
US6869843B2Mar 22, 2005
Non-volatile memory cell with dielectric spacers along sidewalls of a component stack, and method for forming same
MACRONIX INT CO LTD2 citations57
US6784053B2Aug 31, 2004
Method for preventing bit line to bit line leakage in memory cell
MACRONIX INT CO LTD5 citations57
US7132302B2Nov 7, 2006
Method of increasing cell retention capacity of silicon nitride read-only-memory cell
MACRONIX INT CO LTD3 citations51
US8354335B2Jan 15, 2013
Apparatus and associated method for making a floating gate cell with increased overlay between the control gate and floating gate
MACRONIX INT CO LTD0 citations47
US7879708B2Feb 1, 2011
Apparatus and associated method for making a floating gate cell with increased overlay between the control gate and floating gate
MACRONIX INT CO LTD0 citations47
US8017480B2Sep 13, 2011
Apparatus and associated method for making a floating gate cell in a virtual ground array
MACRONIX INT CO LTD0 citations37
TAIWAN SEMICONDUCTOR MFG CO LTD
19 patentsUS9847399B1Dec 19, 2017
Semiconductor device and a method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US9831134B1Nov 28, 2017
Method of manufacturing a semiconductor device having deep wells
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9679909B2Jun 13, 2017
Method for manufacturing a finger trench capacitor with a split-gate flash memory cell
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
US9590059B2Mar 7, 2017
Interdigitated capacitor to integrate with flash memory
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations73
US9570539B2Feb 14, 2017
Integration techniques for MIM or MIP capacitors with flash memory and/or high-κ metal gate CMOS technology
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10741569B2Aug 11, 2020
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US11895836B2Feb 6, 2024
Anti-dishing structure for embedded memory
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11264292B2Mar 1, 2022
Cell-like floating-gate test structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11195834B2Dec 7, 2021
Semiconductor device having deep wells
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11088040B2Aug 10, 2021
Cell-like floating-gate test structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11031294B2Jun 8, 2021
Semiconductor device and a method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12167594B2Dec 10, 2024
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US11430799B2Aug 30, 2022
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US10644000B2May 5, 2020
Semiconductor device having deep wells
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10134644B2Nov 20, 2018
Method of manufacturing a semiconductor device having deep wells
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10049939B2Aug 14, 2018
Semiconductor device and a method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10804281B2Oct 13, 2020
Anti-dishing structure for embedded memory
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10535574B2Jan 14, 2020
Cell-like floating-gate test structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US12376298B2Jul 29, 2025
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50