Inventor
HAN TAE-HYEON
KR20 patents
⚠️ This page may combine multiple inventors who share the name “HAN TAE-HYEON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
KOREA ELECTRONICS TELECOMM
16 patentsUS6124614ASep 26, 2000
Si/SiGe MOSFET and method for fabricating the same
KOREA ELECTRONICS TELECOMM47 citations96
US6337494B1Jan 8, 2002
Super self-aligned bipolar transistor and method for fabricating thereof
KOREA ELECTRONICS TELECOMM53 citations92
US6190984B1Feb 20, 2001
Method for fabricating of super self-aligned bipolar transistor
KOREA ELECTRONICS TELECOMM24 citations92
US5981345ANov 9, 1999
Si/SiGe MOSFET and method for fabricating the same
KOREA ELECTRONICS TELECOMM42 citations92
US5962879AOct 5, 1999
Super self-aligned bipolar transistor
KOREA ELECTRONICS TELECOMM30 citations92
US5897359AApr 27, 1999
Method of manufacturing a silicon/silicon germanium heterojunction bipolar transistor
KOREA ELECTRONICS TELECOMM41 citations92
US5798277AAug 25, 1998
Method for fabricating heterojunction bipolar transistor
KOREA ELECTRONICS TELECOMM39 citations92
US5696007ADec 9, 1997
Method for manufacturing a super self-aligned bipolar transistor
KOREA ELECTRONICS TELECOMM25 citations92
US5668022ASep 16, 1997
Silicon-silicon-germanium heterojunction bipolar transistor fabrication method
KOREA ELECTRONICS TELECOMM40 citations92
US5496745AMar 5, 1996
Method for making bipolar transistor having an enhanced trench isolation
KOREA ELECTRONICS TELECOMM43 citations92
US5484737AJan 16, 1996
Method for fabricating bipolar transistor
KOREA ELECTRONICS TELECOMM23 citations92
US5459084AOct 17, 1995
Method for fabricating hetero-junction bipolar transistor having reduced base parasitic resistance
KOREA ELECTRONICS TELECOMM24 citations92
US5696020ADec 9, 1997
Method for fabricating semiconductor device isolation region using a trench mask
KOREA ELECTRONICS TELECOMM14 citations73
US5444014AAug 22, 1995
Method for fabricating semiconductor device
KOREA ELECTRONICS TELECOMM13 citations73
US5874347AFeb 23, 1999
Method for fabricating field oxide isolation region for semiconductor devices
KOREA ELECTRONICS TELECOMM3 citations62
US6140195AOct 31, 2000
Method for fabricating a lateral collector structure on a buried oxide layer
KOREA ELECTRONICS TELECOMM1 citations52
ASB INC
4 patentsUS6462397B2Oct 8, 2002
Bipolar junction device
ASB INC21 citations92
US6362066B1Mar 26, 2002
Method for manufacturing bipolar devices
ASB INC40 citations92
US6552374B2Apr 22, 2003
Method of manufacturing bipolar device and structure thereof
ASB INC8 citations73
US6562688B2May 13, 2003
Method of manufacturing a bipolar device
ASB INC2 citations62