P

Inventor

SCHREMS MARTIN

AT72 patents
⚠️ This page may combine multiple inventors who share the name “SCHREMS MARTIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

INFINEON TECHNOLOGIES AG

19 patents
US6465370B1Oct 15, 2002

Low leakage, low capacitance isolation material

INFINEON TECHNOLOGIES AG79 citations96
US6699747B2Mar 2, 2004

Method for increasing the capacitance in a storage trench

INFINEON TECHNOLOGIES AG117 citations94
US6580118B2Jun 17, 2003

Non-volatile semiconductor memory cell having a metal oxide dielectric, and method for fabricating the memory cell

INFINEON TECHNOLOGIES AG36 citations93
US6528384B2Mar 4, 2003

Method for manufacturing a trench capacitor

INFINEON TECHNOLOGIES AG20 citations89
US6608341B2Aug 19, 2003

Trench capacitor with capacitor electrodes

INFINEON TECHNOLOGIES AG16 citations84
US6580110B2Jun 17, 2003

Trench capacitor and method for fabricating a trench capacitor

INFINEON TECHNOLOGIES AG14 citations84
US6500707B2Dec 31, 2002

Method for manufacturing a trench capacitor of a memory cell of a semiconductor memory

INFINEON TECHNOLOGIES AG18 citations84
US6828192B2Dec 7, 2004

Semiconductor memory cell and method for fabricating the memory cell

INFINEON TECHNOLOGIES AG14 citations82
US6750096B2Jun 15, 2004

Trench capacitor with buried plate and method for its production

INFINEON TECHNOLOGIES AG17 citations80
US6750111B2Jun 15, 2004

Method for fabricating a trench capacitor

INFINEON TECHNOLOGIES AG12 citations74
US6537926B1Mar 25, 2003

Process for improving the thickness uniformity of a thin oxide layer in semiconductor wafer fabrication

INFINEON TECHNOLOGIES AG12 citations74
US6677218B2Jan 13, 2004

Method for filling trenches in integrated semiconductor circuits

INFINEON TECHNOLOGIES AG10 citations73
US6664167B2Dec 16, 2003

Memory with trench capacitor and selection transistor and method for fabricating it

INFINEON TECHNOLOGIES AG9 citations72
US6548850B1Apr 15, 2003

Trench capacitor configuration and method of producing it

INFINEON TECHNOLOGIES AG8 citations72
US6329703B1Dec 11, 2001

Contact between a monocrystalline silicon region and a polycrystalline silicon structure and method for producing such a contact

INFINEON TECHNOLOGIES AG9 citations72
US6326262B1Dec 4, 2001

Method for fabricating epitaxy layer

INFINEON TECHNOLOGIES AG8 citations72
US6939805B2Sep 6, 2005

Method of etching a layer in a trench and method of fabricating a trench capacitor

INFINEON TECHNOLOGIES AG7 citations71
US6777303B2Aug 17, 2004

Method for fabricating an insulation collar in a trench capacitor

INFINEON TECHNOLOGIES AG11 citations70
US7067372B2Jun 27, 2006

Method for fabricating a memory cell having a trench

INFINEON TECHNOLOGIES AG5 citations63

SIEMENS AG

11 patents

AMS AG

10 patents

INFINEON TECHNOLOGIES CORP

2 patents

TOSHIBA KK

2 patents

AUSTRIAMICROSYSTEMS AG

1 patent

SIEMENS AKTIENGESELLSCHARFT

1 patent

SCHRANK FRANZ

1 patent

SCHREMS MARTIN

1 patent

AT & S AUSTRIA TECH & SYSTEMTECHNIK AG

1 patent

(unassigned)

1 patent

Showing the top 50 of 72 patents by PatentIndex Score.