Inventor
SCHREMS MARTIN
AT72 patents
⚠️ This page may combine multiple inventors who share the name “SCHREMS MARTIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AG
19 patentsUS6465370B1Oct 15, 2002
Low leakage, low capacitance isolation material
INFINEON TECHNOLOGIES AG79 citations96
US6699747B2Mar 2, 2004
Method for increasing the capacitance in a storage trench
INFINEON TECHNOLOGIES AG117 citations94
US6580118B2Jun 17, 2003
Non-volatile semiconductor memory cell having a metal oxide dielectric, and method for fabricating the memory cell
INFINEON TECHNOLOGIES AG36 citations93
US6528384B2Mar 4, 2003
Method for manufacturing a trench capacitor
INFINEON TECHNOLOGIES AG20 citations89
US6608341B2Aug 19, 2003
Trench capacitor with capacitor electrodes
INFINEON TECHNOLOGIES AG16 citations84
US6580110B2Jun 17, 2003
Trench capacitor and method for fabricating a trench capacitor
INFINEON TECHNOLOGIES AG14 citations84
US6500707B2Dec 31, 2002
Method for manufacturing a trench capacitor of a memory cell of a semiconductor memory
INFINEON TECHNOLOGIES AG18 citations84
US6828192B2Dec 7, 2004
Semiconductor memory cell and method for fabricating the memory cell
INFINEON TECHNOLOGIES AG14 citations82
US6750096B2Jun 15, 2004
Trench capacitor with buried plate and method for its production
INFINEON TECHNOLOGIES AG17 citations80
US6750111B2Jun 15, 2004
Method for fabricating a trench capacitor
INFINEON TECHNOLOGIES AG12 citations74
US6537926B1Mar 25, 2003
Process for improving the thickness uniformity of a thin oxide layer in semiconductor wafer fabrication
INFINEON TECHNOLOGIES AG12 citations74
US6677218B2Jan 13, 2004
Method for filling trenches in integrated semiconductor circuits
INFINEON TECHNOLOGIES AG10 citations73
US6664167B2Dec 16, 2003
Memory with trench capacitor and selection transistor and method for fabricating it
INFINEON TECHNOLOGIES AG9 citations72
US6548850B1Apr 15, 2003
Trench capacitor configuration and method of producing it
INFINEON TECHNOLOGIES AG8 citations72
US6329703B1Dec 11, 2001
Contact between a monocrystalline silicon region and a polycrystalline silicon structure and method for producing such a contact
INFINEON TECHNOLOGIES AG9 citations72
US6326262B1Dec 4, 2001
Method for fabricating epitaxy layer
INFINEON TECHNOLOGIES AG8 citations72
US6939805B2Sep 6, 2005
Method of etching a layer in a trench and method of fabricating a trench capacitor
INFINEON TECHNOLOGIES AG7 citations71
US6777303B2Aug 17, 2004
Method for fabricating an insulation collar in a trench capacitor
INFINEON TECHNOLOGIES AG11 citations70
US7067372B2Jun 27, 2006
Method for fabricating a memory cell having a trench
INFINEON TECHNOLOGIES AG5 citations63
SIEMENS AG
11 patentsUS6018174AJan 25, 2000
Bottle-shaped trench capacitor with epi buried layer
SIEMENS AG114 citations98
US6008104ADec 28, 1999
Method of fabricating a trench capacitor with a deposited isolation collar
SIEMENS AG123 citations98
US6310375B1Oct 30, 2001
Trench capacitor with isolation collar and corresponding manufacturing method
SIEMENS AG55 citations96
US6200873B1Mar 13, 2001
Production method for a trench capacitor with an insulation collar
SIEMENS AG76 citations96
US5945704AAug 31, 1999
Trench capacitor with epi buried layer
SIEMENS AG86 citations96
US6265741B1Jul 24, 2001
Trench capacitor with epi buried layer
SIEMENS AG41 citations93
US6040211AMar 21, 2000
Semiconductors having defect denuded zones
SIEMENS AG19 citations93
US6376348B1Apr 23, 2002
Reliable polycide gate stack with reduced sheet resistance and thickness
SIEMENS AG20 citations92
US6828191B1Dec 7, 2004
Trench capacitor with an insulation collar and method for producing a trench capacitor
SIEMENS AG53 citations90
US6509599B1Jan 21, 2003
Trench capacitor with insulation collar and method for producing the trench capacitor
SIEMENS AG41 citations90
US6068928AMay 30, 2000
Method for producing a polycrystalline silicon structure and polycrystalline silicon layer to be produced by the method
SIEMENS AG8 citations72
AMS AG
10 patentsUS9684074B2Jun 20, 2017
Optical sensor arrangement and method of producing an optical sensor arrangement
AMS AG18 citations84
US9735101B2Aug 15, 2017
Semiconductor device with through-substrate via covered by a solder ball
AMS AG4 citations83
US9577001B2Feb 21, 2017
Integrated imaging device for infrared radiation and method of production
AMS AG10 citations83
US9543245B2Jan 10, 2017
Semiconductor sensor device and method of producing a semiconductor sensor device
AMS AG2 citations73
US10283541B2May 7, 2019
Semiconductor device comprising an aperture array and method of producing such a semiconductor device
AMS AG2 citations72
US9870988B2Jan 16, 2018
Method of producing a semiconductor device with through-substrate via covered by a solder ball
AMS AG2 citations72
US9553039B2Jan 24, 2017
Semiconductor device with through-substrate via covered by a solder ball and related method of production
AMS AG3 citations72
US9947711B2Apr 17, 2018
Semiconductor device with surface integrated focusing element and method of producing a semiconductor device with focusing element
AMS AG2 citations71
US10374114B2Aug 6, 2019
Lateral single-photon avalanche diode and method of producing a lateral single-photon avalanche diode
AMS AG2 citations69
US11888010B2Jan 30, 2024
System-on-chip camera with integrated light sensor(s) and method of producing a system-on-chip camera
AMS AG0 citations62
INFINEON TECHNOLOGIES CORP
2 patentsTOSHIBA KK
2 patentsAUSTRIAMICROSYSTEMS AG
1 patentSIEMENS AKTIENGESELLSCHARFT
1 patentSCHRANK FRANZ
1 patentSCHREMS MARTIN
1 patentAT & S AUSTRIA TECH & SYSTEMTECHNIK AG
1 patent(unassigned)
1 patentShowing the top 50 of 72 patents by PatentIndex Score.