Inventor
ADAMS VANCE H
US12 patents
⚠️ This page may combine multiple inventors who share the name “ADAMS VANCE H”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FREESCALE SEMICONDUCTOR INC
10 patentsUS7238580B2Jul 3, 2007
Semiconductor fabrication process employing stress inducing source drain structures with graded impurity concentration
FREESCALE SEMICONDUCTOR INC59 citations97
US7166897B2Jan 23, 2007
Method and apparatus for performance enhancement in an asymmetrical semiconductor device
FREESCALE SEMICONDUCTOR INC19 citations92
US7041576B2May 9, 2006
Separately strained N-channel and P-channel transistors
FREESCALE SEMICONDUCTOR INC37 citations89
US7064396B2Jun 20, 2006
Integrated circuit with multiple spacer insulating region widths
FREESCALE SEMICONDUCTOR INC16 citations84
US7420202B2Sep 2, 2008
Electronic device including a transistor structure having an active region adjacent to a stressor layer and a process for forming the electronic device
FREESCALE SEMICONDUCTOR INC13 citations83
US7161199B2Jan 9, 2007
Transistor structure with stress modification and capacitive reduction feature in a width direction and method thereof
FREESCALE SEMICONDUCTOR INC12 citations83
US7538002B2May 26, 2009
Semiconductor process integrating source/drain stressors and interlevel dielectric layer stressors
FREESCALE SEMICONDUCTOR INC7 citations73
US7714318B2May 11, 2010
Electronic device including a transistor structure having an active region adjacent to a stressor layer
FREESCALE SEMICONDUCTOR INC5 citations62
US7205202B2Apr 17, 2007
Semiconductor device and method for regional stress control
FREESCALE SEMICONDUCTOR INC3 citations62
US7271069B2Sep 18, 2007
Semiconductor device having a plurality of different layers and method therefor
FREESCALE SEMICONDUCTOR INC0 citations41
WINSTEAD BRIAN A
2 patentsUS9847389B2Dec 19, 2017
Semiconductor device including an active region and two layers having different stress characteristics
WINSTEAD BRIAN A0 citations51
US8569858B2Oct 29, 2013
Semiconductor device including an active region and two layers having different stress characteristics
WINSTEAD BRIAN A0 citations51