Inventor

CHOI JUNG-DAL

KR189 patents

⚠️ This page may combine multiple inventors who share the name “CHOI JUNG-DAL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CHOI JUNG-DAL

SAMSUNG ELECTRONICS CO LTD

Method for programming a non-volatile memory device with program disturb control

Multi-bit memory cell array of a non-volatile semiconductor memory device and method for driving the same

Nonvolatile memory device with NAND cell strings

Flash memory devices, methods of erasing flash memory devices and memory systems including the same

NAND flash memory device having dummy memory cells and methods of operating same

Memory array architecture for a memory device and method of operating the memory array architecture

Operating a non-volatile memory device

Floating trap non-volatile semiconductor memory devices including high dielectric constant blocking insulating layers

Non-volatile memory device with NAND type cell structure

Integrated circuit memory devices having reduced susceptibility to inadvertent programming and erasure and methods of operating same

Non-volatile semiconductor memory devices

Non-volatile memory device with diffusion layer

NAND-type flash memory device and method of operating the same

Nonvolatile semiconductor memory having boosting lines self-aligned with word lines

Nonvolatile memory device having a program-assist plate

Methods of programming nonvolatile memory cells by floating drain or source regions associated therewith

Method of manufacturing a nonvolatile memory device having a program-assist plate

Semiconductor memory device including program inhibition capacitors and method for controlling program-disturb of non-selected memory cells

Level shifter with reduced leakage current and block driver for nonvolatile semiconductor memory device

Method of forming non-volatile memory having floating trap type device

Method for manufacturing nonvolatile memory device

Multi-bit memory cell array of a non-volatile semiconductor memory device and method for driving the same

Nonvolatile semiconductor memory having sub-arrays formed within pocket wells

Nand-type flash memory device and driving method thereof

Data output buffer for use in semiconductor device

Integrated circuit memory devices having vertically arranged strings of memory cells therein and methods of operating same

NAND flash memory device having dummy memory cells and methods of operating same

Non-volatile semiconductor memory devices

Integrated circuit layout and a semiconductor device manufactured using the same

Non-volatile memory device having floating trap type memory cell and method of forming the same

Floating trap-type non-volatile memory device

Highly integrated non-volatile memory cell array having a high program speed

NAND-type flash memory device and method of forming the same

Non-volatile memory device and fabrication method thereof

Flash memory device and operating method for concurrently applying different bias voltages to dummy memory cells and regular memory cells during erasure

NAND-type flash memory devices and methods of fabricating the same

Semiconductor device and method of manufacturing the same

Non-volatile memory device having a metal-oxide-nitride-oxide-semiconductor gate structure

Method of forming a non-volatile memory device having a metal-oxide-nitride-oxide-semiconductor gate structure

Read-only memory device

Memory devices including vertical pillars and methods of manufacturing and operating the same

Flash memory device and operating method for concurrently applying different bias voltages to dummy memory cells and regular memory cells during erasure

Non-volatile memory devices including dummy word lines and related structures and methods

JANG JAE HOON

Semiconductor memory device and programming method thereof

SIM JAE-SUNG

Memory devices including vertical pillars and methods of manufacturing and operating the same

LEE JAE DUK

Methods of programming non-volatile flash memory devices by applying a higher voltage level to a selected word line than to a word line neighboring the selected word line

SK HYNIX INC

Semiconductor memory device

LEE JAE-GOO

Vertical memory devices with quantum-dot charge storage cells

LEE CHANG-HYUN

Flash memory device and operating method for concurrently applying different bias voltages to dummy memory cells and regular memory cells during erasure

PARK KI-TAE

NAND flash memory device having dummy memory cells and methods of operating same