Inventor

HEBERT FRANCOIS

US170 patents

⚠️ This page may combine multiple inventors who share the name “HEBERT FRANCOIS”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HEBERT FRANCOIS

NAT SEMICONDUCTOR CORP

Method for forming a self-aligned bipolar junction transistor with silicide extrinsic base contacts and selective epitaxial grown intrinsic base

Method of fabricating self-aligned contact trench DMOS transistors

Complementary Si/SiGe heterojunction bipolar technology

Self-aligned source and body contact structure for high performance DMOS transistors and method of fabricating same

Method of making truly complementary and self-aligned bipolar and CMOS transistor structures with minimized base and gate resistances and parasitic capacitance

Method for forming buried interconnect structue having stability at high temperatures

Planarized trench and field oxide isolation scheme

Method of fabricating a planarized trench and field oxide isolation structure

Planar selective field oxide isolation process using SEG/ELO

Simple planarized trench isolation and field oxide formation using poly-silicon

Process for making self-aligned source/drain polysilicon or polysilicide contacts in field effect transistors

Planarized trench and field oxide and poly isolation scheme

ALPHA & OMEGA SEMICONDUCTOR

Compact power semiconductor package and method with stacked inductor and integrated circuit die

Semiconductor power device having a stacked discrete inductor structure

Top-side cooled semiconductor package with stacked interconnection plates and method

Charged balanced devices with shielded gate trench

Lead frame-based discrete power inductor

Super-self-aligned trench-dmos structure and method

True CSP power MOSFET based on bottom-source LDMOS

Bottom-drain LDMOS power MOSFET structure having a top drain strap

Planar split-gate high-performance MOSFET structure and manufacturing method

Lateral PNP bipolar transistor with narrow trench emitter

Lateral PNP bipolar transistor formed with multiple epitaxial layers

LINEAR TECHN INC

High voltage transistors with graded extension

High voltage MOS transistor with gate extension

High voltage MOS transistor with up-retro well

High voltage MOS transistor with gate extension

SPECTRIAN INC

Lateral DMOS transistor for RF/microwave applications

Lateral DMOS transistor for RF/microwave applications

MOSFET device having recessed gate-drain shield and method

MOS transistor with shield coplanar with gate electrode

HEBERT FRANCOIS

Single die output power stage using trench-gate low-side and LDMOS high-side MOSFETS, structure and method

Compact semiconductor package with integrated bypass capacitor and method

Chip scale power converter package having an inductor substrate

Power devices with integrated protection devices: structures and methods

SPECTRIAN CORP

Integrated passive devices with reduced parasitic substrate capacitance

MOSFET having buried shield plate for reduced gate/drain capacitance

MOSFET device having recessed gate-drain shield and method

SPECTRIAN

MOSFET having buried shield plate for reduced gate/drain capacitance

Lateral diffused MOS transistor with trench source contact

CREE INC

MOSFET having self-aligned gate and buried shield and method of making same

Self-aligned shield structure for realizing high frequency power MOSFET devices with improved reliability

INTERSIL INC

Stacked power converter structure and method

Voltage converter and systems including same

AVANTEK

Method for producing a fully walled emitter-base structure in a bipolar transistor

ALPHA OMEGA SEMICONDUCTOR LTD

Bottom source LDMOSFET structure and method

ALPH & OMEGA SEMICONDUCTOR LTD

Inverted-trench grounded-source field effect transistor (FET) structure using highly conductive substrates

NAT SEMICONDUCTOR CORPORATON

Tungsten silicide/ tungsten polycide anisotropic dry etch process

ALSTOM

Protection system for protecting a poly-phase distribution transformer insulated in a liquid dielectric, the system including at least one phase disconnector switch

MAGNACHIP SEMICONDUCTOR LTD

Semiconductor package