Inventor

HARLEY ERIC C

US18 patents

⚠️ This page may combine multiple inventors who share the name “HARLEY ERIC C”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HARLEY ERIC C

IBM

Single crystal source-drain merged by polycrystalline material

FinFET with dielectric isolation after gate module for improved source and drain region epitaxial growth

FinFET with dielectric isolation after gate module for improved source and drain region epitaxial growth

finFET with dielectric isolation after gate module for improved source and drain region epitaxial growth

Method for embedded diamond-shaped stress element

Measuring strain of epitaxial films using micro x-ray diffraction for in-line metrology

FinFET with dielectric isolation after gate module for improved source and drain region epitaxial growth

Multigate finFETs with epitaxially-grown merged source/drains

Field effect transistor device

FinFET with dielectric isolation after gate module for improved source and drain region epitaxial growth

Self-limiting selective epitaxy process for preventing merger of semiconductor fins

GLOBALFOUNDRIES INC

FinFET and nanowire semiconductor devices with suspended channel regions and gate structures surrounding the suspended channel regions

FINFET structures with fins recessed beneath the gate

Graphene transistor with a sublithographic channel width

Partial FIN on oxide for improved electrical isolation of raised active regions

Method of inspecting a semiconductor substrate

CHAN KEVIN K

Field effect transistor device

ADAM THOMAS N

Measurement of CMOS device channel strain by X-ray diffraction