Inventor

STOKER MATTHEW W

US21 patents

⚠️ This page may combine multiple inventors who share the name “STOKER MATTHEW W”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

STOKER MATTHEW W

GLOBALFOUNDRIES INC

Integrated circuit structure including laterally recessed source/drain epitaxial region and method of forming same

Integrated circuit structure including laterally recessed source/drain epitaxial region and method of forming same

Contact resistance optimization via EPI growth engineering

Methods, apparatus and system for forming increased surface regions within EPI structures for improved trench silicide

Graphene transistor with a sublithographic channel width

Semiconductor structure including two-dimensional and three-dimensional bonding materials

Methods, apparatus, and system for forming epitaxial formations with reduced risk of merging

IBM

Fin field effect transistors having heteroepitaxial channels

Faceted intrinsic epitaxial buffer layer for reducing short channel effects while maximizing channel stress levels

Stressed transistor with improved metastability

Faceted intrinsic epitaxial buffer layer for reducing short channel effects while maximizing channel stress levels

Field effect transistor device

Method for growing strain-inducing materials in CMOS circuits in a gate first flow

FREESCALE SEMICONDUCTOR INC

Semiconductor fabrication process employing stress inducing source drain structures with graded impurity concentration

Method of manufacturing SOI template layer

Transistor devices with nano-crystal gate structures

MOS device with nano-crystal gate structure

MOS devices with multi-layer gate stack

CHAN KEVIN K

Field effect transistor device

BAI BO

Method for growing strain-inducing materials in CMOS circuits in a gate first flow

FRESSSCALE SEMICONDUCTOR INC

MOS device with multi-layer gate stack