P

Inventor

LEE EUN-HONG

KR29 patents
⚠️ This page may combine multiple inventors who share the name “LEE EUN-HONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

19 patents
US8043926B2Oct 25, 2011

Nonvolatile memory devices including oxygen-deficient metal oxide layers and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD48 citations98
US7842991B2Nov 30, 2010

Nonvolatile memory devices including oxygen-deficient metal oxide layers and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD99 citations98
US7491987B2Feb 17, 2009

Junction field effect thin film transistor

SAMSUNG ELECTRONICS CO LTD56 citations97
US7417271B2Aug 26, 2008

Electrode structure having at least two oxide layers and non-volatile memory device having the same

SAMSUNG ELECTRONICS CO LTD97 citations97
US7498600B2Mar 3, 2009

Variable resistance random access memory device and a method of fabricating the same

SAMSUNG ELECTRONICS CO LTD63 citations96
US7352037B2Apr 1, 2008

Semiconductor device and random access memory having single gate electrode corresponding to a pair of channel regions

SAMSUNG ELECTRONICS CO LTD32 citations92
US7345898B2Mar 18, 2008

Complementary nonvolatile memory device

SAMSUNG ELECTRONICS CO LTD22 citations92
US7759771B2Jul 20, 2010

Resistance random access memory and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD8 citations84
US7714313B2May 11, 2010

Resistive RAM having at least one varistor and methods of operating the same

SAMSUNG ELECTRONICS CO LTD9 citations84
US7436704B2Oct 14, 2008

Non-volatile memory devices and method thereof

SAMSUNG ELECTRONICS CO LTD14 citations84
US7202521B2Apr 10, 2007

Silicon-oxide-nitride-oxide-silicon (SONOS) memory device and methods of manufacturing and operating the same

SAMSUNG ELECTRONICS CO LTD19 citations84
US8022725B2Sep 20, 2011

Convertible logic circuits comprising carbon nanotube transistors having ambipolar charateristics

SAMSUNG ELECTRONICS CO LTD9 citations83
US8007617B2Aug 30, 2011

Method of transferring carbon nanotubes

SAMSUNG ELECTRONICS CO LTD10 citations81
US8350262B2Jan 8, 2013

Nonvolatile memory device and nonvolatile memory array including the same

SAMSUNG ELECTRONICS CO LTD2 citations63
US7943926B2May 17, 2011

Nonvolatile memory device and nonvolatile memory array including the same

SAMSUNG ELECTRONICS CO LTD5 citations63
US7719871B2May 18, 2010

Methods of operating and manufacturing logic device and semiconductor device including complementary nonvolatile memory device, and reading circuit for the same

SAMSUNG ELECTRONICS CO LTD1 citations62
US7626859B2Dec 1, 2009

Phase-change random access memory and programming method

SAMSUNG ELECTRONICS CO LTD5 citations62
US7535049B2May 19, 2009

Multi bits flash memory device and method of operating the same

SAMSUNG ELECTRONICS CO LTD3 citations62
US7859035B2Dec 28, 2010

Storage node having a metal-insulator-metal structure, non-volatile memory device including a storage node having a metal-insulator-metal structure and method of operating the same

SAMSUNG ELECTRONICS CO LTD0 citations51

LEE EUN-HONG

4 patents

CHO CHOONG-RAE

2 patents

PARK YOON-DONG

1 patent

BOURIM EL MOSTAFA

1 patent

KIM UN-JEONG

1 patent

MIN YO-SEB

1 patent