Inventor
LEE EUN-HONG
KR29 patents
⚠️ This page may combine multiple inventors who share the name “LEE EUN-HONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
19 patentsUS8043926B2Oct 25, 2011
Nonvolatile memory devices including oxygen-deficient metal oxide layers and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD48 citations98
US7842991B2Nov 30, 2010
Nonvolatile memory devices including oxygen-deficient metal oxide layers and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD99 citations98
US7491987B2Feb 17, 2009
Junction field effect thin film transistor
SAMSUNG ELECTRONICS CO LTD56 citations97
US7417271B2Aug 26, 2008
Electrode structure having at least two oxide layers and non-volatile memory device having the same
SAMSUNG ELECTRONICS CO LTD97 citations97
US7498600B2Mar 3, 2009
Variable resistance random access memory device and a method of fabricating the same
SAMSUNG ELECTRONICS CO LTD63 citations96
US7352037B2Apr 1, 2008
Semiconductor device and random access memory having single gate electrode corresponding to a pair of channel regions
SAMSUNG ELECTRONICS CO LTD32 citations92
US7345898B2Mar 18, 2008
Complementary nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD22 citations92
US7759771B2Jul 20, 2010
Resistance random access memory and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD8 citations84
US7714313B2May 11, 2010
Resistive RAM having at least one varistor and methods of operating the same
SAMSUNG ELECTRONICS CO LTD9 citations84
US7436704B2Oct 14, 2008
Non-volatile memory devices and method thereof
SAMSUNG ELECTRONICS CO LTD14 citations84
US7202521B2Apr 10, 2007
Silicon-oxide-nitride-oxide-silicon (SONOS) memory device and methods of manufacturing and operating the same
SAMSUNG ELECTRONICS CO LTD19 citations84
US8022725B2Sep 20, 2011
Convertible logic circuits comprising carbon nanotube transistors having ambipolar charateristics
SAMSUNG ELECTRONICS CO LTD9 citations83
US8007617B2Aug 30, 2011
Method of transferring carbon nanotubes
SAMSUNG ELECTRONICS CO LTD10 citations81
US8350262B2Jan 8, 2013
Nonvolatile memory device and nonvolatile memory array including the same
SAMSUNG ELECTRONICS CO LTD2 citations63
US7943926B2May 17, 2011
Nonvolatile memory device and nonvolatile memory array including the same
SAMSUNG ELECTRONICS CO LTD5 citations63
US7719871B2May 18, 2010
Methods of operating and manufacturing logic device and semiconductor device including complementary nonvolatile memory device, and reading circuit for the same
SAMSUNG ELECTRONICS CO LTD1 citations62
US7626859B2Dec 1, 2009
Phase-change random access memory and programming method
SAMSUNG ELECTRONICS CO LTD5 citations62
US7535049B2May 19, 2009
Multi bits flash memory device and method of operating the same
SAMSUNG ELECTRONICS CO LTD3 citations62
US7859035B2Dec 28, 2010
Storage node having a metal-insulator-metal structure, non-volatile memory device including a storage node having a metal-insulator-metal structure and method of operating the same
SAMSUNG ELECTRONICS CO LTD0 citations51
LEE EUN-HONG
4 patentsUS9006710B2Apr 14, 2015
Type-switching transistors, electronic devices including the same, and methods of operating the type-switching transistors and electronic devices
LEE EUN-HONG4 citations71
US8823077B2Sep 2, 2014
Semiconductor device and method of manufacturing the same
LEE EUN-HONG6 citations70
US8796819B2Aug 5, 2014
Non-volatile memory device including a variable resistance material
LEE EUN-HONG0 citations50
US8796667B2Aug 5, 2014
Static random access memories having carbon nanotube thin films
LEE EUN-HONG0 citations39