Inventor
OHTSUKA KENICHI
JP44 patents
⚠️ This page may combine multiple inventors who share the name “OHTSUKA KENICHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MITSUBISHI ELECTRIC CORP
11 patentsUS5020072AMay 28, 1991
Semiconductor laser device
MITSUBISHI ELECTRIC CORP32 citations92
US8350270B2Jan 8, 2013
Silicon carbide semiconductor device and method for manufacturing the same
MITSUBISHI ELECTRIC CORP2 citations62
US7928469B2Apr 19, 2011
MOSFET and method for manufacturing MOSFET
MITSUBISHI ELECTRIC CORP2 citations60
US10062758B2Aug 28, 2018
Semiconductor device
MITSUBISHI ELECTRIC CORP1 citations52
US9502553B2Nov 22, 2016
Semiconductor device and method for manufacturing the same
MITSUBISHI ELECTRIC CORP0 citations52
US7939943B2May 10, 2011
Nitride semiconductor device including an electrode in ohmic contact with a P-type nitride semiconductor contact layer
MITSUBISHI ELECTRIC CORP1 citations52
US7796661B2Sep 14, 2010
Semiconductor laser
MITSUBISHI ELECTRIC CORP0 citations52
US7564072B2Jul 21, 2009
Semiconductor device having junction termination extension
MITSUBISHI ELECTRIC CORP1 citations52
US7847296B2Dec 7, 2010
Silicon carbide semiconductor device
MITSUBISHI ELECTRIC CORP0 citations42
US8377811B2Feb 19, 2013
Method for manufacturing silicon carbide semiconductor device
MITSUBISHI ELECTRIC CORP0 citations40
US7678597B2Mar 16, 2010
Method of manufacturing semiconductor device including gallium-nitride semiconductor structure and a palladium contact
MITSUBISHI ELECTRIC CORP0 citations39
OHTSUKA KENICHI
7 patentsUS8885173B2Nov 11, 2014
Film thickness measurement device and film thickness measurement method
OHTSUKA KENICHI6 citations70
US8093598B2Jan 10, 2012
Power semiconductor device
OHTSUKA KENICHI2 citations62
US9059193B2Jun 16, 2015
Epitaxial wafer and semiconductor element
OHTSUKA KENICHI2 citations61
US8916880B2Dec 23, 2014
Silicon carbide epitaxial wafer and semiconductor device
OHTSUKA KENICHI2 citations59
US8699023B2Apr 15, 2014
Reflectivity measuring device, reflectivity measuring method, membrane thickness measuring device, and membrane thickness measuring method
OHTSUKA KENICHI3 citations59
US9153443B2Oct 6, 2015
Semiconductor device and method of fabricating same
OHTSUKA KENICHI0 citations51
US8649023B2Feb 11, 2014
Film thickness measurement device and measurement method
OHTSUKA KENICHI1 citations49
MIURA NARUHISA
4 patentsUS9105715B2Aug 11, 2015
Semiconductor device and method for manufacturing the same
MIURA NARUHISA6 citations83
US8860039B2Oct 14, 2014
Semiconductor device
MIURA NARUHISA9 citations83
US8492836B2Jul 23, 2013
Power semiconductor device
MIURA NARUHISA7 citations83
US9324782B2Apr 26, 2016
Semiconductor device
MIURA NARUHISA0 citations41
CYPRESS SEMICONDUCTOR CORP
4 patentsUS9831114B1Nov 28, 2017
Self-aligned trench isolation in integrated circuits
CYPRESS SEMICONDUCTOR CORP2 citations73
US9437470B2Sep 6, 2016
Self-aligned trench isolation in integrated circuits
CYPRESS SEMICONDUCTOR CORP3 citations73
US10256137B2Apr 9, 2019
Self-aligned trench isolation in integrated circuits
CYPRESS SEMICONDUCTOR CORP0 citations52
US9431503B2Aug 30, 2016
Integrating transistors with different poly-silicon heights on the same die
CYPRESS SEMICONDUCTOR CORP0 citations51
HAMAMATSU PHOTONICS KK
4 patentsUS9846028B2Dec 19, 2017
Film thickness measurement method and film thickness measurement device
HAMAMATSU PHOTONICS KK3 citations70
US11988497B2May 21, 2024
Optical unit and film thickness measurement device
HAMAMATSU PHOTONICS KK1 citations60
US12578183B2Mar 17, 2026
Film thickness measuring device and film thickness measuring method
HAMAMATSU PHOTONICS KK0 citations57
US11280604B2Mar 22, 2022
Film thickness measurement device, film thickness measurement method, film thickness measurement program, and recording medium for recording film thickness measurement program
HAMAMATSU PHOTONICS KK0 citations52
HINO SHIRO
2 patentsWATANABE HIROSHI
2 patentsUS8963276B2Feb 24, 2015
Semiconductor device including a cell array having first cells and second cells interspersed around the arrangement of the first cells
WATANABE HIROSHI2 citations62
US8304901B2Nov 6, 2012
Semiconductor device having a groove and a junction termination extension layer surrounding a guard ring layer
WATANABE HIROSHI4 citations62