Inventor

HSIEH KUANG-YEU

TW87 patents

⚠️ This page may combine multiple inventors who share the name “HSIEH KUANG-YEU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HSIEH KUANG-YEU

MACRONIX INT CO LTD

Multi-level cell resistance random access memory with metal oxides

Bridge resistance random access memory device with a singular contact structure

Methods of operating a bistable resistance random access memory with multiple memory layers and multilevel memory states

Stacked thin film transistor, non-volatile memory devices and methods for fabricating the same

Resistive memory structure with buffer layer

Methods of operating non-volatile memory cells having an oxide/nitride multilayer insulating structure

Operation scheme for spectrum shift in charge trapping non-volatile memory

Programmable resistive RAM and manufacturing method

Stacked thin film transistor, non-volatile memory devices and methods for fabricating the same

Operation method for multi-level switching of metal-oxide based RRAM

Method for forming self-aligned thermal isolation cell for a variable resistance memory array

Air cell thermal isolation for a memory array formed of a programmable resistive material

Resistor random access memory cell device

Stacked non-volatile memory device and methods for fabricating the same

Manufacturing method for phase change RAM with electrode layer process

Program and erase methods with substrate transient hot carrier injections in a non-volatile memory

Self-aligned structure and method for confining a melting point in a resistor random access memory

Methods of operating a bistable resistance random access memory with multiple memory layers and multilevel memory states

Resistance type memory device and fabricating method and operating method thereof

Non-volatile memory cell having metal nano-particles for trapping charges and fabrication thereof

Stacked non-volatile memory device and methods for fabricating the same

Dual-gate, sonos, non-volatile memory cells and arrays thereof

Resistive memory structure with buffer layer

Methods of operating a bistable resistance random access memory with multiple memory layers and multilevel memory states

Program and erase methods with substrate transient hot carrier injections in a non-volatile memory

Structure and method for a magnetic memory device with proximity writing

Resistor random access memory cell with L-shaped electrode

Memory device and manufacturing method

Method for forming self-aligned thermal isolation cell for a variable resistance memory array

Method for manufacturing a resistor random access memory with reduced active area and reduced contact areas

Methods and apparatus for thermally assisted programming of a magnetic memory device

Methods of forming low hydrogen concentration charge-trapping layer structures for non-volatile memory

Magnetic random access memory, manufacturing method and programming method thereof

Method and apparatus for non-volatile multi-bit memory

Memory cell device and manufacturing method

LAI ERH-KUN

Method of a multi-level cell resistance random access memory with metal oxides

Resistor random access memory cell device

Resistor random access memory cell with L-shaped electrode

Resistor random access memory structure having a defined small area of electrical contact

CHEN SHIH-HUNG

Memory with off-chip controller

Integrated circuit capacitor and method

Semiconductor structure with improved capacitance of bit line

Semiconductor structure and manufacturing method of the same

HO CHIAHUA

Structures and methods of a bistable resistive random access memory

Resistance random access memory structure for enhanced retention

CHIEN WEI-CHIH

Aluminum copper oxide based memory devices and methods for manufacture

MACRONIX INTERNAT CO INTL

Operation scheme with charge balancing erase for charge trapping non-volatile memory

LAI ERH KUN

Method for manufacturing a resistor random access memory with a self-aligned air gap insulator

MACRONIX INTERNAT COMPANY LTD

Method for programming a charge-trapping nonvolatile memory cell by raised-Vs channel initialed secondary electron injection (CHISEL)

LEE MING-DAOU

Resistive random access memory and method for manufacturing the same