Inventor
KARPOV ILYA V
US36 patents
⚠️ This page may combine multiple inventors who share the name “KARPOV ILYA V”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
OVONYX INC
10 patentsUS7910904B2Mar 22, 2011
Multi-level phase change memory
OVONYX INC16 citations93
US7864567B2Jan 4, 2011
Programming a normally single phase chalcogenide material for use as a memory of FPLA
OVONYX INC25 citations92
US7990761B2Aug 2, 2011
Immunity of phase change material to disturb in the amorphous phase
OVONYX INC7 citations84
US9036409B2May 19, 2015
Immunity of phase change material to disturb in the amorphous phase
OVONYX INC3 citations73
US7420200B2Sep 2, 2008
Damascene phase change memory
OVONYX INC2 citations63
US9159915B2Oct 13, 2015
Phase change memory with threshold switch select device
OVONYX INC2 citations61
US9536606B2Jan 3, 2017
Seasoning phase change memories
OVONYX INC0 citations52
US9251895B2Feb 2, 2016
Immunity of phase change material to disturb in the amorphous phase
OVONYX INC0 citations52
US8861293B2Oct 14, 2014
Immunity of phase change material to disturb in the amorphous phase
OVONYX INC0 citations52
US7811885B2Oct 12, 2010
Method for forming a phase change device
OVONYX INC0 citations52
INTEL CORP
6 patentsUS7135696B2Nov 14, 2006
Phase change memory with damascene memory element
INTEL CORP67 citations98
US7414883B2Aug 19, 2008
Programming a normally single phase chalcogenide material for use as a memory or FPLA
INTEL CORP19 citations92
US7390691B2Jun 24, 2008
Increasing phase change memory column landing margin
INTEL CORP11 citations84
US7965545B2Jun 21, 2011
Reducing temporal changes in phase change memories
INTEL CORP8 citations83
US7894237B2Feb 22, 2011
Programming multilevel cell phase change memories
INTEL CORP17 citations83
US7211819B2May 1, 2007
Damascene phase change memory
INTEL CORP4 citations74
KARPOV ILYA V
4 patentsUS7534625B2May 19, 2009
Phase change memory with damascene memory element
KARPOV ILYA V86 citations97
US8187946B2May 29, 2012
Manufacturing a phase change memory device having a ring heater
KARPOV ILYA V8 citations83
US8130536B2Mar 6, 2012
Read window in chalcogenide semiconductor memories
KARPOV ILYA V5 citations61
US8637342B2Jan 28, 2014
Phase change memory with threshold switch select device
KARPOV ILYA V3 citations60
MICRON TECHNOLOGY INC
3 patentsUS8952299B2Feb 10, 2015
Dual resistance heater for phase change devices and manufacturing method thereof
MICRON TECHNOLOGY INC5 citations84
US10522757B2Dec 31, 2019
Dual resistive-material regions for phase change memory devices
MICRON TECHNOLOGY INC0 citations52
US10522756B2Dec 31, 2019
Dual resistance heater for phase change memory devices
MICRON TECHNOLOGY INC0 citations52
SAVRANSKY SEMYON D
3 patentsUS8228722B2Jul 24, 2012
Reducing temporal changes in phase change memories
SAVRANSKY SEMYON D2 citations60
US8462546B2Jun 11, 2013
Reducing temporal changes in phase change memories
SAVRANSKY SEMYON D0 citations50
US8076664B2Dec 13, 2011
Phase change memory with layered insulator
SAVRANSKY SEMYON D0 citations50