Inventor
CAO HUY
US21 patents
⚠️ This page may combine multiple inventors who share the name “CAO HUY”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
GLOBALFOUNDRIES INC
15 patentsUS10325819B1Jun 18, 2019
Methods, apparatus and system for providing a pre-RMG replacement metal contact for a finFET device
GLOBALFOUNDRIES INC15 citations84
US9330982B1May 3, 2016
Semiconductor device with diffusion barrier film and method of manufacturing the same
GLOBALFOUNDRIES INC11 citations83
US10269654B1Apr 23, 2019
Methods, apparatus and system for replacement contact for a finFET device
GLOBALFOUNDRIES INC12 citations82
US9991363B1Jun 5, 2018
Contact etch stop layer with sacrificial polysilicon layer
GLOBALFOUNDRIES INC2 citations73
US10431500B1Oct 1, 2019
Multi-step insulator formation in trenches to avoid seams in insulators
GLOBALFOUNDRIES INC2 citations72
US9793169B1Oct 17, 2017
Methods for forming mask layers using a flowable carbon-containing silicon dioxide material
GLOBALFOUNDRIES INC3 citations72
US8940650B2Jan 27, 2015
Methods for fabricating integrated circuits utilizing silicon nitride layers
GLOBALFOUNDRIES INC4 citations72
US10930549B2Feb 23, 2021
Cap structure
GLOBALFOUNDRIES INC0 citations61
US10043753B2Aug 7, 2018
Airgaps to isolate metallization features
GLOBALFOUNDRIES INC0 citations51
US10460986B2Oct 29, 2019
Cap structure
GLOBALFOUNDRIES INC0 citations50
US10256089B2Apr 9, 2019
Replacement contact cuts with an encapsulated low-K dielectric
GLOBALFOUNDRIES INC0 citations50
US9318440B2Apr 19, 2016
Formation of carbon-rich contact liner material
GLOBALFOUNDRIES INC1 citations49
US9130019B2Sep 8, 2015
Formation of carbon-rich contact liner material
GLOBALFOUNDRIES INC1 citations49
US9620381B2Apr 11, 2017
Facilitating etch processing of a thin film via partial implantation thereof
GLOBALFOUNDRIES INC0 citations41
US10453751B2Oct 22, 2019
Tone inversion method and structure for selective contact via patterning
GLOBALFOUNDRIES INC0 citations38