Inventor
LIAO EBIN
TW21 patents
⚠️ This page may combine multiple inventors who share the name “LIAO EBIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
14 patentsUS10269611B1Apr 23, 2019
Method and apparatus for bonding semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD10 citations81
US9899467B2Feb 20, 2018
Semiconductor devices, methods of manufacture thereof, and capacitors
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10784162B2Sep 22, 2020
Method of making a semiconductor component having through-silicon vias
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US11545392B2Jan 3, 2023
Semiconductor component having through-silicon vias
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10727294B2Jul 28, 2020
Semiconductor devices, methods of manufacture thereof, and capacitors
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US10115634B2Oct 30, 2018
Semiconductor component having through-silicon vias and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US9418923B2Aug 16, 2016
Semiconductor component having through-silicon vias and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12051672B2Jul 30, 2024
Package structure and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US10672737B2Jun 2, 2020
Three-dimensional integrated circuit structure and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations59
US10872874B2Dec 22, 2020
Bonding apparatus and method of bonding substrates
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9847256B2Dec 19, 2017
Methods for forming a device having a capped through-substrate via structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9514986B2Dec 6, 2016
Device with capped through-substrate via structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10867831B1Dec 15, 2020
Method and apparatus for bonding semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations49
US10748803B2Aug 18, 2020
Method and apparatus for bonding semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations49
TAIWAN SEMICONDUCTOR MFG
3 patentsUS9087878B2Jul 21, 2015
Device with through-silicon via (TSV) and method of forming the same
TAIWAN SEMICONDUCTOR MFG5 citations84
US9263382B2Feb 16, 2016
Through substrate via structures and methods of forming the same
TAIWAN SEMICONDUCTOR MFG5 citations73
US8575725B2Nov 5, 2013
Through-silicon vias for semicondcutor substrate and method of manufacture
TAIWAN SEMICONDUCTOR MFG1 citations62