Inventor

LEE JIN IL

KR32 patents

⚠️ This page may combine multiple inventors who share the name “LEE JIN IL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LEE JIN IL

SAMSUNG ELECTRONICS CO LTD

Method of forming a phase change memory device

Methods of forming a semiconductor device including a phase change material layer

Method of forming a phase changeable material layer, a method of manufacturing a phase changeable memory unit, and a method of manufacturing a phase changeable semiconductor memory device

Methods of forming low leakage currents metal-insulator-metal (MIM) capacitors and related MIM capacitors

Methods of forming capacitor structures having aluminum oxide diffusion barriers

Method of forming a phase change material layer, method of forming a phase change memory device using the same, and a phase change memory device so formed

Phase change memory device including resistant material

Methods for forming ruthenium films with β-diketone containing ruthenium complexes and method for manufacturing metal-insulator-metal capacitor using the same

Semiconductor device including conductive structure having nucleation structure and method of forming the same

Methods of fabricating semiconductor device including phase change layer

Variable resistance non-volatile memory cells and methods of fabricating same

Methods of manufacturing a thin film including zirconium titanium oxide and methods of manufacturing a gate structure, a capacitor and a flash memory device including the same

Methods of forming integrated circuit devices having a capacitor with a hydrogen barrier spacer on a sidewall thereof and integrated circuit devices formed thereby

Capacitors including a cavity containing a buried layer

Metal precursors for low temperature deposition and methods of forming a metal thin layer and manufacturing a phase-change memory device using the metal precursors

Method of forming phase change material layer using Ge(II) source, and method of fabricating phase change memory device

Methods of forming contact structures and semiconductor devices fabricated using contact structures

Semiconductor device including conductive structure having nucleation structure and method of forming the same

Semiconductor device including conductive structure having nucleation structure and method of forming the same

Gap filling method and method for forming semiconductor memory device using the same

PARK HYE-YOUNG

Methods of forming a material layer and methods of fabricating a memory device

Germanium compound, semiconductor device fabricated using the same, and methods of forming the same

BAE BYOUNG-JAE

Method of forming phase change material layer using Ge(II) source, and method of fabrication phase change memory device

Method of forming phase change material layer using Ge(II) source, and method of fabricating phase change memory device

LEE JIN-IL

Data processing device and method using error detection code, method of compensating for data skew, and semiconductor device having the data processing device

Methods of forming a phase change memory device

KIM SI-HONG

Data output buffer and memory device

SEOL HO-SEOK

On-die termination circuit, data output buffer and semiconductor memory device

PARK HAN OH

Automatic real-time PCR system for the various analysis of biological sample

PARK YOUNG-LIM

Phase change memory device

BIONEER CORP

Biological sample processing apparatus

OH GYU-HWAN

Method of fabricating phase-change memory device having TiC layer