Inventor
ISOBE YASUHIRO
JP31 patents
⚠️ This page may combine multiple inventors who share the name “ISOBE YASUHIRO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOSHIBA KK
26 patentsUS11508647B2Nov 22, 2022
Semiconductor device
TOSHIBA KK2 citations72
US11264899B2Mar 1, 2022
Semiconductor device
TOSHIBA KK4 citations72
US10771057B1Sep 8, 2020
Semiconductor device
TOSHIBA KK3 citations72
US9627489B2Apr 18, 2017
Semiconductor device
TOSHIBA KK2 citations72
US12328924B2Jun 10, 2025
Semiconductor device
TOSHIBA KK1 citations64
US12588573B2Mar 24, 2026
Semiconductor device
TOSHIBA KK0 citations62
US12170316B2Dec 17, 2024
Nitride semiconductor device with element isolation area
TOSHIBA KK0 citations62
US12027614B2Jul 2, 2024
Semiconductor device
TOSHIBA KK1 citations62
US11830916B2Nov 28, 2023
Nitride semiconductor device with element isolation area
TOSHIBA KK0 citations62
US10998433B2May 4, 2021
Semiconductor device
TOSHIBA KK1 citations62
US12444668B2Oct 14, 2025
Semiconductor device
TOSHIBA KK0 citations52
US12362264B2Jul 15, 2025
Semiconductor device
TOSHIBA KK0 citations52
US12273101B2Apr 8, 2025
Semiconductor device
TOSHIBA KK0 citations52
US12046668B2Jul 23, 2024
Semiconductor device
TOSHIBA KK0 citations52
US12002858B2Jun 4, 2024
Semiconductor device
TOSHIBA KK0 citations52
US11984387B2May 14, 2024
Plurality of stacked transistors attached by solder balls
TOSHIBA KK0 citations52
US11948864B2Apr 2, 2024
Semiconductor device
TOSHIBA KK0 citations52
US11251298B2Feb 15, 2022
Power semiconductor device
TOSHIBA KK0 citations52
US9543146B2Jan 10, 2017
Manufacturing method of semiconductor device that includes forming plural nitride semiconductor layers of identical material
TOSHIBA KK0 citations52
US12062651B2Aug 13, 2024
Semiconductor device
TOSHIBA KK0 citations51
US11290100B2Mar 29, 2022
Semiconductor device
TOSHIBA KK0 citations51
US9627504B2Apr 18, 2017
Semiconductor device
TOSHIBA KK0 citations51
US9484429B2Nov 1, 2016
High electron mobility transistor (HEMT) capable of absorbing a stored hole more efficiently and method for manufacturing the same
TOSHIBA KK0 citations51
US9136346B2Sep 15, 2015
High electron mobility transistor (HEMT) capable of absorbing a stored hole more efficiently
TOSHIBA KK1 citations51
US10074739B2Sep 11, 2018
Semiconductor device having electric field near drain electrode alleviated
TOSHIBA KK0 citations41
US9887281B2Feb 6, 2018
Semiconductor device
TOSHIBA KK0 citations41
HORIBA STEC CO LTD
3 patentsUS8356623B2Jan 22, 2013
Mass flow meter and mass flow controller
HORIBA STEC CO LTD59 citations91
US11162883B2Nov 2, 2021
Fluid characteristics measurement system, program storage medium storing program for fluid characteristics measurement system, and fluid characteristics measurement method
HORIBA STEC CO LTD0 citations51
US11448535B2Sep 20, 2022
Flow rate calculation system, flow rate calculation system program, flow rate calculation method, and flow rate calculation device
HORIBA STEC CO LTD0 citations48