Inventor
YOON SUNG MIN
KR43 patents
⚠️ This page may combine multiple inventors who share the name “YOON SUNG MIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
KOREA ELECTRONICS TELECOMM
21 patentsUS7547913B2Jun 16, 2009
Phase-change memory device using Sb-Se metal alloy and method of fabricating the same
KOREA ELECTRONICS TELECOMM21 citations92
US7026639B2Apr 11, 2006
Phase change memory element capable of low power operation and method of fabricating the same
KOREA ELECTRONICS TELECOMM39 citations92
US7233017B2Jun 19, 2007
Multibit phase change memory device and method of driving the same
KOREA ELECTRONICS TELECOMM21 citations91
US7482625B2Jan 27, 2009
Composition for thermosetting organic polymeric gate insulating layer and organic thin film transistor using the same
KOREA ELECTRONICS TELECOMM10 citations84
US7977674B2Jul 12, 2011
Phase change memory device and method of fabricating the same
KOREA ELECTRONICS TELECOMM10 citations83
US7884347B2Feb 8, 2011
Phase-change memory device and method of fabricating the same
KOREA ELECTRONICS TELECOMM5 citations63
US7867811B2Jan 11, 2011
Encapsulated organic luminescent display panel and method for manufacturing the same
KOREA ELECTRONICS TELECOMM3 citations63
US7507601B2Mar 24, 2009
Encapsulated organic luminescent display panel and method for manufacturing the same
KOREA ELECTRONICS TELECOMM1 citations63
US7061012B2Jun 13, 2006
Encapsulated organic luminescent display panel
KOREA ELECTRONICS TELECOMM3 citations63
US8710866B2Apr 29, 2014
Inverter, NAND gate, and NOR gate
KOREA ELECTRONICS TELECOMM1 citations61
US8716035B2May 6, 2014
Nonvolatile memory cell and method of manufacturing the same
KOREA ELECTRONICS TELECOMM0 citations52
US8039294B2Oct 18, 2011
Insulating layer, organic thin film transistor using the insulating layer, and method of fabricating the organic thin film transistor
KOREA ELECTRONICS TELECOMM1 citations52
US7989793B2Aug 2, 2011
Electrical device using phase change material, phase change memory device using solid state reaction and method for fabricating the same
KOREA ELECTRONICS TELECOMM0 citations52
US7952086B2May 31, 2011
Phase-change nonvolatile memory device using Sb-Zn alloy
KOREA ELECTRONICS TELECOMM0 citations51
US7855421B2Dec 21, 2010
Embedded phase-change memory and method of fabricating the same
KOREA ELECTRONICS TELECOMM0 citations51
US7767994B2Aug 3, 2010
Phase-change random access memory device and method of manufacturing the same
KOREA ELECTRONICS TELECOMM0 citations51
US7417891B2Aug 26, 2008
Phase change memory device having semiconductor laser unit
KOREA ELECTRONICS TELECOMM0 citations51
US7911227B2Mar 22, 2011
Programmable logic block of FPGA using phase-change memory device
KOREA ELECTRONICS TELECOMM0 citations50
US9099991B2Aug 4, 2015
Inverter, NAND gate, and NOR gate
KOREA ELECTRONICS TELECOMM0 citations49
US7564053B2Jul 21, 2009
Photo-reactive organic polymeric gate insulating layer composition and organic thin film transistor using the same
KOREA ELECTRONICS TELECOMM0 citations42
US7586119B2Sep 8, 2009
Low temperature-cured polymer gate insulation layer and organic thin film transistor using the same
KOREA ELECTRONICS TELECOMM0 citations41
SAMSUNG ELECTRONICS CO LTD
6 patentsUS7451406B2Nov 11, 2008
Display apparatus and management method for virtual workspace thereof
SAMSUNG ELECTRONICS CO LTD29 citations92
US7389439B2Jun 17, 2008
Method and apparatus for managing power of portable computer system
SAMSUNG ELECTRONICS CO LTD19 citations86
US7886136B2Feb 8, 2011
Computer system, method, and medium for switching operating system
SAMSUNG ELECTRONICS CO LTD8 citations84
US7783989B2Aug 24, 2010
Apparatus and method for managing layout of a window
SAMSUNG ELECTRONICS CO LTD2 citations63
US7439958B2Oct 21, 2008
Computer system and method of controlling the same via a remote controller used as a mouse
SAMSUNG ELECTRONICS CO LTD5 citations63
US10552494B2Feb 4, 2020
Content providing method of content providing system and electronic apparatus
SAMSUNG ELECTRONICS CO LTD1 citations58
YOON SUNG MIN
5 patentsUS8198625B2Jun 12, 2012
Transparent nonvolatile memory thin film transistor and method of manufacturing the same
YOON SUNG MIN9 citations83
US8558295B2Oct 15, 2013
Nonvolatile memory cell and method of manufacturing the same
YOON SUNG MIN5 citations82
US8445887B2May 21, 2013
Nonvolatile programmable switch device using phase-change memory device and method of manufacturing the same
YOON SUNG MIN4 citations62
US8476106B2Jul 2, 2013
Transparent nonvolatile memory thin film transistor and method of manufacturing the same
YOON SUNG MIN0 citations51
USRE45356EFeb 3, 2015
Phase-change memory device using Sb-Se metal alloy and method of fabricating the same
YOON SUNG MIN0 citations50