P

Inventor

YOON SUNG MIN

KR43 patents
⚠️ This page may combine multiple inventors who share the name “YOON SUNG MIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KOREA ELECTRONICS TELECOMM

21 patents
US7547913B2Jun 16, 2009

Phase-change memory device using Sb-Se metal alloy and method of fabricating the same

KOREA ELECTRONICS TELECOMM21 citations92
US7026639B2Apr 11, 2006

Phase change memory element capable of low power operation and method of fabricating the same

KOREA ELECTRONICS TELECOMM39 citations92
US7233017B2Jun 19, 2007

Multibit phase change memory device and method of driving the same

KOREA ELECTRONICS TELECOMM21 citations91
US7482625B2Jan 27, 2009

Composition for thermosetting organic polymeric gate insulating layer and organic thin film transistor using the same

KOREA ELECTRONICS TELECOMM10 citations84
US7977674B2Jul 12, 2011

Phase change memory device and method of fabricating the same

KOREA ELECTRONICS TELECOMM10 citations83
US7884347B2Feb 8, 2011

Phase-change memory device and method of fabricating the same

KOREA ELECTRONICS TELECOMM5 citations63
US7867811B2Jan 11, 2011

Encapsulated organic luminescent display panel and method for manufacturing the same

KOREA ELECTRONICS TELECOMM3 citations63
US7507601B2Mar 24, 2009

Encapsulated organic luminescent display panel and method for manufacturing the same

KOREA ELECTRONICS TELECOMM1 citations63
US7061012B2Jun 13, 2006

Encapsulated organic luminescent display panel

KOREA ELECTRONICS TELECOMM3 citations63
US8710866B2Apr 29, 2014

Inverter, NAND gate, and NOR gate

KOREA ELECTRONICS TELECOMM1 citations61
US8716035B2May 6, 2014

Nonvolatile memory cell and method of manufacturing the same

KOREA ELECTRONICS TELECOMM0 citations52
US8039294B2Oct 18, 2011

Insulating layer, organic thin film transistor using the insulating layer, and method of fabricating the organic thin film transistor

KOREA ELECTRONICS TELECOMM1 citations52
US7989793B2Aug 2, 2011

Electrical device using phase change material, phase change memory device using solid state reaction and method for fabricating the same

KOREA ELECTRONICS TELECOMM0 citations52
US7952086B2May 31, 2011

Phase-change nonvolatile memory device using Sb-Zn alloy

KOREA ELECTRONICS TELECOMM0 citations51
US7855421B2Dec 21, 2010

Embedded phase-change memory and method of fabricating the same

KOREA ELECTRONICS TELECOMM0 citations51
US7767994B2Aug 3, 2010

Phase-change random access memory device and method of manufacturing the same

KOREA ELECTRONICS TELECOMM0 citations51
US7417891B2Aug 26, 2008

Phase change memory device having semiconductor laser unit

KOREA ELECTRONICS TELECOMM0 citations51
US7911227B2Mar 22, 2011

Programmable logic block of FPGA using phase-change memory device

KOREA ELECTRONICS TELECOMM0 citations50
US9099991B2Aug 4, 2015

Inverter, NAND gate, and NOR gate

KOREA ELECTRONICS TELECOMM0 citations49
US7564053B2Jul 21, 2009

Photo-reactive organic polymeric gate insulating layer composition and organic thin film transistor using the same

KOREA ELECTRONICS TELECOMM0 citations42
US7586119B2Sep 8, 2009

Low temperature-cured polymer gate insulation layer and organic thin film transistor using the same

KOREA ELECTRONICS TELECOMM0 citations41

SAMSUNG ELECTRONICS CO LTD

6 patents

YOON SUNG MIN

5 patents

LEE SEUNG YUN

2 patents

ELECTRONICS & TELECOMMUNICATIONS RES INST

2 patents

LEE SEUNG-YUN

2 patents

ELECT & TELECOMM RESEARCH INST

1 patent

BAEK JUN YOUNG

1 patent

PARK SANG HEE

1 patent

KIM YOUNG-KUK

1 patent

BYUN CHUNWON

1 patent