Inventor
LEE NAM YEAL
KR32 patents
⚠️ This page may combine multiple inventors who share the name “LEE NAM YEAL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SK HYNIX INC
12 patentsUS9293362B2Mar 22, 2016
Semiconductor device including air gaps and method of fabricating the same
SK HYNIX INC21 citations92
US9202774B2Dec 1, 2015
Semiconductor device with air gap and method for fabricating the same
SK HYNIX INC15 citations92
US9514980B2Dec 6, 2016
Semiconductor device with air gap and method for fabricating the same
SK HYNIX INC8 citations84
US9466603B2Oct 11, 2016
Semiconductor device with air gap and method for fabricating the same
SK HYNIX INC11 citations84
US9275937B2Mar 1, 2016
Semiconductor device with damascene bit line and method for fabricating the same
SK HYNIX INC7 citations84
US9159609B2Oct 13, 2015
Semiconductor device with air gap spacer and capping barrier layer and method for fabricating the same
SK HYNIX INC15 citations84
US9024371B2May 5, 2015
Semiconductor device with air gap and method for fabricating the same
SK HYNIX INC6 citations84
US8822335B2Sep 2, 2014
Semiconductor device with air gap and method for fabricating the same
SK HYNIX INC10 citations84
US9698097B2Jul 4, 2017
Semiconductor device with air gap and method for fabricating the same
SK HYNIX INC4 citations73
US9576895B2Feb 21, 2017
Semiconductor device with damascene bit line and method for fabricating the same
SK HYNIX INC4 citations73
US9355903B2May 31, 2016
Semiconductor device with air gap and method for fabricating the same
SK HYNIX INC2 citations63
US12327758B2Jun 10, 2025
Method for fabricating semiconductor device
SK HYNIX INC0 citations56
KOREA ELECTRONICS TELECOMM
7 patentsUS7547913B2Jun 16, 2009
Phase-change memory device using Sb-Se metal alloy and method of fabricating the same
KOREA ELECTRONICS TELECOMM21 citations92
US7026639B2Apr 11, 2006
Phase change memory element capable of low power operation and method of fabricating the same
KOREA ELECTRONICS TELECOMM39 citations92
US7233017B2Jun 19, 2007
Multibit phase change memory device and method of driving the same
KOREA ELECTRONICS TELECOMM21 citations91
US7977674B2Jul 12, 2011
Phase change memory device and method of fabricating the same
KOREA ELECTRONICS TELECOMM10 citations83
US7855421B2Dec 21, 2010
Embedded phase-change memory and method of fabricating the same
KOREA ELECTRONICS TELECOMM0 citations51
US7767994B2Aug 3, 2010
Phase-change random access memory device and method of manufacturing the same
KOREA ELECTRONICS TELECOMM0 citations51
US7417891B2Aug 26, 2008
Phase change memory device having semiconductor laser unit
KOREA ELECTRONICS TELECOMM0 citations51
HYNIX SEMICONDUCTOR INC
5 patentsUS7820546B2Oct 26, 2010
Method for manufacturing semiconductor device preventing loss of junction region
HYNIX SEMICONDUCTOR INC2 citations63
US7777336B2Aug 17, 2010
Metal line of semiconductor device and method for forming the same
HYNIX SEMICONDUCTOR INC2 citations63
US7875978B2Jan 25, 2011
Metal line having a multi-layered diffusion layer in a semiconductor device and method for forming the same
HYNIX SEMICONDUCTOR INC2 citations62
US8053895B2Nov 8, 2011
Metal line of semiconductor device having a multilayer molybdenum diffusion barrier and method for forming the same
HYNIX SEMICONDUCTOR INC0 citations52
US8008708B2Aug 30, 2011
Metal line of semiconductor device having a diffusion barrier and method for forming the same
HYNIX SEMICONDUCTOR INC0 citations52
OH JOON SEOK
2 patentsUS8278218B2Oct 2, 2012
Electrical conductor line having a multilayer diffusion barrier for use in a semiconductor device and method for forming the same
OH JOON SEOK2 citations60
US8080472B2Dec 20, 2011
Metal line having a MoxSiy/Mo diffusion barrier of semiconductor device and method for forming the same
OH JOON SEOK0 citations39