Inventor
KANG WOO TAG
US17 patents
⚠️ This page may combine multiple inventors who share the name “KANG WOO TAG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
7 patentsUS6326270B1Dec 4, 2001
Methods of forming integrated circuit memory devices using masking layers to inhibit overetching of impurity regions and conductive lines
SAMSUNG ELECTRONICS CO LTD101 citations98
US6130457AOct 10, 2000
Semiconductor-on-insulator devices having insulating layers therein with self-aligned openings
SAMSUNG ELECTRONICS CO LTD127 citations97
US5877046AMar 2, 1999
Methods of forming semiconductor-on-insulator substrates
SAMSUNG ELECTRONICS CO LTD59 citations94
US6417547B2Jul 9, 2002
Semiconductor device with a halo structure
SAMSUNG ELECTRONICS CO LTD18 citations92
US6258645B1Jul 10, 2001
Halo structure for CMOS transistors and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD15 citations92
US6218273B1Apr 17, 2001
Methods of forming isolation trenches in integrated circuits using protruding insulating layers
SAMSUNG ELECTRONICS CO LTD8 citations73
US6080622AJun 27, 2000
Method for fabricating a DRAM cell capacitor including forming a conductive storage node by depositing and etching an insulative layer, filling with conductive material, and removing the insulative layer
SAMSUNG ELECTRONICS CO LTD4 citations62
INFINEON TECHNOLOGIES AG
6 patentsUS6537885B1Mar 25, 2003
Transistor and method of manufacturing a transistor having a shallow junction formation using a two step EPI layer
INFINEON TECHNOLOGIES AG90 citations97
US6724054B1Apr 20, 2004
Self-aligned contact formation using double SiN spacers
INFINEON TECHNOLOGIES AG16 citations84
US7439591B2Oct 21, 2008
Gate layer diode method and apparatus
INFINEON TECHNOLOGIES AG10 citations83
US6930357B2Aug 16, 2005
Active SOI structure with a body contact through an insulator
INFINEON TECHNOLOGIES AG18 citations83
US7256441B2Aug 14, 2007
Partially recessed DRAM cell structure
INFINEON TECHNOLOGIES AG2 citations63
US6867087B2Mar 15, 2005
Formation of dual work function gate electrode
INFINEON TECHNOLOGIES AG1 citations52
QUALCOMM INC
3 patentsUS12513915B2Dec 30, 2025
Dynamic random-access memory (DRAM) on hot compute logic for last-level-cache
QUALCOMM INC0 citations62
US8889522B2Nov 18, 2014
High breakdown voltage embedded MIM capacitor structure
QUALCOMM INC1 citations52
US9116876B2Aug 25, 2015
Programmable built-in-self tester (BIST) in memory controller
QUALCOMM INC1 citations49