Inventor
GOEBEL ANDREAS
US47 patents
⚠️ This page may combine multiple inventors who share the name “GOEBEL ANDREAS”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ACORN TECH INC
15 patentsUS9620611B1Apr 11, 2017
MIS contact structure with metal oxide conductor
ACORN TECH INC16 citations93
US9362376B2Jun 7, 2016
Metal contacts to group IV semiconductors by inserting interfacial atomic monolayers
ACORN TECH INC13 citations92
US9270083B2Feb 23, 2016
Tensile strained semiconductor photon emission and detection devices and integrated photonics system
ACORN TECH INC10 citations92
US9036672B2May 19, 2015
Tensile strained semiconductor photon emission and detection devices and integrated photonics system
ACORN TECH INC12 citations92
US10505047B2Dec 10, 2019
Nanowire transistor with source and drain induced by electrical contacts with negative Schottky barrier height
ACORN TECH INC5 citations84
US10193307B2Jan 29, 2019
Tensile strained semiconductor photon emission and detection devices and integrated photonics system
ACORN TECH INC4 citations84
US10170627B2Jan 1, 2019
Nanowire transistor with source and drain induced by electrical contacts with negative schottky barrier height
ACORN TECH INC9 citations84
US10147798B2Dec 4, 2018
MIS contact structure with metal oxide conductor
ACORN TECH INC4 citations84
US10833194B2Nov 10, 2020
SOI wafers and devices with buried stressor
ACORN TECH INC2 citations73
US10727647B2Jul 28, 2020
Tensile strained semiconductor photon emission and detection devices and integrated photonics system
ACORN TECH INC0 citations52
US10553695B2Feb 4, 2020
MIS contact structure with metal oxide conductor
ACORN TECH INC0 citations52
US10505005B2Dec 10, 2019
Metal contacts to group IV semiconductors by inserting interfacial atomic monolayers
ACORN TECH INC0 citations52
US10008827B2Jun 26, 2018
Tensile strained semiconductor photon emission and detection devices and integrated photonics system
ACORN TECH INC0 citations52
US9755038B2Sep 5, 2017
Metal contacts to group IV semiconductors by inserting interfacial atomic monolayers
ACORN TECH INC0 citations52
US9484426B2Nov 1, 2016
Metal contacts to group IV semiconductors by inserting interfacial atomic monolayers
ACORN TECH INC0 citations52
ACORN SEMI LLC
15 patentsUS11462643B2Oct 4, 2022
Nanowire transistor with source and drain induced by electrical contacts with negative Schottky barrier height
ACORN SEMI LLC3 citations83
US10833199B2Nov 10, 2020
Nanowire transistor with source and drain induced by electrical contacts with negative Schottky barrier height
ACORN SEMI LLC7 citations83
US11843040B2Dec 12, 2023
MIS contact structure with metal oxide conductor
ACORN SEMI LLC1 citations73
US11728624B2Aug 15, 2023
Tensile strained semiconductor photon emission and detection devices and integrated photonics system
ACORN SEMI LLC2 citations73
US10872964B2Dec 22, 2020
MIS contact structure with metal oxide conductor
ACORN SEMI LLC1 citations73
US12477776B2Nov 18, 2025
Nanowire transistor with source and drain induced by electrical contacts with negative Schottky barrier height
ACORN SEMI LLC0 citations62
US12402365B2Aug 26, 2025
SOI wafers and devices with buried stressors
ACORN SEMI LLC0 citations62
US12336263B2Jun 17, 2025
Metal contacts to group IV semiconductors by inserting interfacial atomic monolayers
ACORN SEMI LLC0 citations62
US12034078B2Jul 9, 2024
Nanowire transistor with source and drain induced by electrical contacts with negative Schottky barrier height
ACORN SEMI LLC0 citations62
US11804533B2Oct 31, 2023
Metal contacts to group IV semiconductors by inserting interfacial atomic monolayers
ACORN SEMI LLC0 citations62
US11791411B2Oct 17, 2023
Relating to SOI wafers and devices with buried stressors
ACORN SEMI LLC0 citations62
US11610974B2Mar 21, 2023
Metal contacts to group IV semiconductors by inserting interfacial atomic monolayers
ACORN SEMI LLC0 citations62
US11322615B2May 3, 2022
SOI wafers and devices with buried stressor
ACORN SEMI LLC0 citations62
US11271370B2Mar 8, 2022
Tensile strained semiconductor photon emission and detection devices and integrated photonics system
ACORN SEMI LLC0 citations62
US10879366B2Dec 29, 2020
Metal contacts to group IV semiconductors by inserting interfacial atomic monolayers
ACORN SEMI LLC0 citations52
APPLIED MATERIALS INC
6 patentsUS6888639B2May 3, 2005
In-situ film thickness measurement using spectral interference at grazing incidence
APPLIED MATERIALS INC21 citations92
US7760980B2Jul 20, 2010
Ridge technique for fabricating an optical detector and an optical waveguide
APPLIED MATERIALS INC17 citations83
US7680376B2Mar 16, 2010
Wafer-level alignment of optical elements
APPLIED MATERIALS INC7 citations73
US7505647B2Mar 17, 2009
Method and apparatus for demultiplexing optical signals in a passive optical network
APPLIED MATERIALS INC7 citations73
US7869672B2Jan 11, 2011
Optical assemblies and methods for fabrication of optical assemblies
APPLIED MATERIALS INC1 citations62
US8023782B2Sep 20, 2011
Method and apparatus for demultiplexing optical signals in a passive optical network
APPLIED MATERIALS INC1 citations52
SIEMENS AG
3 patentsUS5343506AAug 30, 1994
Nuclear reactor installation with a core catcher device and method for exterior cooling of the latter by natural circulation
SIEMENS AG55 citations91
US5867548AFeb 2, 1999
Device and method for collecting and cooling reactor-meltdown products
SIEMENS AG19 citations90
US5402456AMar 28, 1995
Nuclear reactor system and method for operating the same
SIEMENS AG14 citations72