Inventor

PARK CHAN KWANG

KR15 patents

⚠️ This page may combine multiple inventors who share the name “PARK CHAN KWANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HYUNDAI ELECTRONICS IND

9 patents

US6010926AJan 4, 2000

Method for forming multiple or modulated wells of semiconductor device

HYUNDAI ELECTRONICS IND108 citations97

US5773330AJun 30, 1998

Semiconductor device and method for fabricating the same

HYUNDAI ELECTRONICS IND67 citations95

US6104065AAug 15, 2000

Semiconductor device having an active region in a substrate with trapezoidal cross-sectional structure

HYUNDAI ELECTRONICS IND20 citations92

US5627095AMay 6, 1997

Method for fabricating semiconductor devices having bit lines and storage node contacts

HYUNDAI ELECTRONICS IND33 citations92

US5677210AOct 14, 1997

SAMSUNG ELECTRONICS CO LTD

5 patents

US7586135B2Sep 8, 2009

Multilevel integrated circuit devices and methods of forming the same

SAMSUNG ELECTRONICS CO LTD7 citations73

US7075142B2Jul 11, 2006

Cell arrays of memory devices having extended source strapping regions

SAMSUNG ELECTRONICS CO LTD3 citations62

US7952134B2May 31, 2011

Semiconductor memory device and method of forming the same

SAMSUNG ELECTRONICS CO LTD2 citations58

US7531409B2May 12, 2009

Fabrication method and structure for providing a recessed channel in a nonvolatile memory device

SAMSUNG ELECTRONICS CO LTD1 citations50

US7276415B2Oct 2, 2007

Contactless nonvolatile memory device and method of forming the same

SAMSUNG ELECTRONICS CO LTD0 citations41

BYUN KI-YEOL

1 patent

US8450170B2May 28, 2013

Semiconductor memory device and method of forming the same

BYUN KI-YEOL0 citations41

PARK CHAN KWANG

HYUNDAI ELECTRONICS IND

Method for forming multiple or modulated wells of semiconductor device

Semiconductor device and method for fabricating the same

Semiconductor device having an active region in a substrate with trapezoidal cross-sectional structure

Method for fabricating semiconductor devices having bit lines and storage node contacts

Method of producing a fully planarized concave transistor

Semiconductor device and method for fabricating the same

Sense amplifier

Sense amplifier

Method for forming contact holes in semiconductor device

SAMSUNG ELECTRONICS CO LTD

Multilevel integrated circuit devices and methods of forming the same

Cell arrays of memory devices having extended source strapping regions

Semiconductor memory device and method of forming the same

Fabrication method and structure for providing a recessed channel in a nonvolatile memory device

Contactless nonvolatile memory device and method of forming the same

BYUN KI-YEOL

Semiconductor memory device and method of forming the same