Inventor
MA DIANA XIAOBING
US33 patents
⚠️ This page may combine multiple inventors who share the name “MA DIANA XIAOBING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
APPLIED MATERIALS INC
27 patentsUS5710486AJan 20, 1998
Inductively and multi-capacitively coupled plasma reactor
APPLIED MATERIALS INC139 citations99
US6331380B1Dec 18, 2001
Method of pattern etching a low K dielectric layer
APPLIED MATERIALS INC159 citations98
US6189484B1Feb 20, 2001
Plasma reactor having a helicon wave high density plasma source
APPLIED MATERIALS INC116 citations98
US6143476ANov 7, 2000
Method for high temperature etching of patterned layers using an organic mask stack
APPLIED MATERIALS INC186 citations98
US6080529AJun 27, 2000
Method of etching patterned layers useful as masking during subsequent etching or for damascene structures
APPLIED MATERIALS INC551 citations98
US5968847AOct 19, 1999
Process for copper etch back
APPLIED MATERIALS INC94 citations98
US5756400AMay 26, 1998
Method and apparatus for cleaning by-products from plasma chamber surfaces
APPLIED MATERIALS INC407 citations98
US6949203B2Sep 27, 2005
System level in-situ integrated dielectric etch process particularly useful for copper dual damascene
APPLIED MATERIALS INC69 citations97
US6547977B1Apr 15, 2003
Method for etching low k dielectrics
APPLIED MATERIALS INC320 citations97
US6020686AFeb 1, 2000
Inductively and multi-capacitively coupled plasma reactor
APPLIED MATERIALS INC52 citations96
US5891348AApr 6, 1999
Process gas focusing apparatus and method
APPLIED MATERIALS INC61 citations96
US5817534AOct 6, 1998
RF plasma reactor with cleaning electrode for cleaning during processing of semiconductor wafers
APPLIED MATERIALS INC94 citations96
US6372633B1Apr 16, 2002
Method and apparatus for forming metal interconnects
APPLIED MATERIALS INC58 citations95
US6008140ADec 28, 1999
Copper etch using HCI and HBr chemistry
APPLIED MATERIALS INC47 citations95
US5779926AJul 14, 1998
Plasma process for etching multicomponent alloys
APPLIED MATERIALS INC62 citations95
US6153530ANov 28, 2000
Post-etch treatment of plasma-etched feature surfaces to prevent corrosion
APPLIED MATERIALS INC58 citations94
US5783101AJul 21, 1998
High etch rate residue free metal etch process with low frequency high power inductive coupled plasma
APPLIED MATERIALS INC21 citations93
US6620289B1Sep 16, 2003
Method and apparatus for asymmetric gas distribution in a semiconductor wafer processing system
APPLIED MATERIALS INC22 citations92
US6569775B1May 27, 2003
Method for enhancing plasma processing performance
APPLIED MATERIALS INC28 citations92
US6547978B2Apr 15, 2003
Method of heating a semiconductor substrate
APPLIED MATERIALS INC26 citations92
US6534416B1Mar 18, 2003
Control of patterned etching in semiconductor features
APPLIED MATERIALS INC15 citations92
US6488862B1Dec 3, 2002
Etched patterned copper features free from etch process residue
APPLIED MATERIALS INC23 citations92
US6010603AJan 4, 2000
Patterned copper etch for micron and submicron features, using enhanced physical bombardment
APPLIED MATERIALS INC34 citations92
US5777289AJul 7, 1998
RF plasma reactor with hybrid conductor and multi-radius dome ceiling
APPLIED MATERIALS INC35 citations92
US6248250B1Jun 19, 2001
RF plasma reactor with hybrid conductor and multi-radius dome ceiling
APPLIED MATERIALS INC29 citations91
US6489247B1Dec 3, 2002
Copper etch using HCl and HBR chemistry
APPLIED MATERIALS INC11 citations73
US6635577B1Oct 21, 2003
Method for reducing topography dependent charging effects in a plasma enhanced semiconductor wafer processing system
APPLIED MATERIALS INC8 citations69