Inventor
KOH YOUNG-LARK
KR2 patents
Patents
2 patentsUS6159849ADec 12, 2000
Methods of forming nitride dielectric layers having reduced exposure to oxygen
SAMSUNG ELECTRONICS CO LTD20 citations89
US6194281B1Feb 27, 2001
Methods of forming three-dimensional capacitor structures including ozone tetraethylorthosilicate undoped silicate
SAMSUNG ELECTRONICS CO LTD13 citations70