Inventor
CHO MIN KUCK
KR16 patents
⚠️ This page may combine multiple inventors who share the name “CHO MIN KUCK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
KEY FOUNDRY CO LTD
7 patentsUS11757011B2Sep 12, 2023
Semiconductor device with non-volatile memory cell and manufacturing method thereof
KEY FOUNDRY CO LTD3 citations73
US11665896B2May 30, 2023
Semiconductor device including nonvolatile memory device and logic device and manufacturing method of semiconductor device including nonvolatile memory device and logic device
KEY FOUNDRY CO LTD2 citations72
US11696440B2Jul 4, 2023
Nonvolatile memory device
KEY FOUNDRY CO LTD0 citations62
US11348931B2May 31, 2022
Nonvolatile memory device
KEY FOUNDRY CO LTD0 citations62
US11289498B2Mar 29, 2022
Semiconductor device including nonvolatile memory device and logic device and manufacturing method of semiconductor device including nonvolatile memory device and logic device
KEY FOUNDRY CO LTD0 citations62
US10985074B2Apr 20, 2021
Method of manufacturing a CMOS transistor
KEY FOUNDRY CO LTD0 citations61
US11825650B2Nov 21, 2023
Single poly non-volatile memory device and manufacturing method thereof
KEY FOUNDRY CO LTD0 citations51
SK KEYFOUNDRY INC
4 patentsUS12457777B2Oct 28, 2025
Semiconductor device with deep trench isolation
SK KEYFOUNDRY INC0 citations62
US12176402B2Dec 24, 2024
Semiconductor device with non-volatile memory cell and manufacturing method thereof
SK KEYFOUNDRY INC0 citations62
US11991878B2May 21, 2024
Semiconductor device including nonvolatile memory device and logic device and manufacturing method of semiconductor device including nonvolatile memory device and logic device
SK KEYFOUNDRY INC0 citations62
US12532464B2Jan 20, 2026
Semiconductor device including single poly non-volatile memory device and method of manufacturing same
SK KEYFOUNDRY INC0 citations51
HYNIX SEMICONDUCTOR INC
2 patentsUS6620684B2Sep 16, 2003
Method of manufacturing nonvolatile memory cell
HYNIX SEMICONDUCTOR INC8 citations73
US7553724B2Jun 30, 2009
Method for manufacturing code address memory cell by which a stack insulating film of an oxide film and a nitride film used as a dielectric film in a flash memory is used as a gate oxide film
HYNIX SEMICONDUCTOR INC1 citations51