Inventor

RACANELLI MARCO

US58 patents

⚠️ This page may combine multiple inventors who share the name “RACANELLI MARCO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

RACANELLI MARCO

NEWPORT FAB LLC

High density composite MIM capacitor with reduced voltage dependence in semiconductor dies

High density composite MIM capacitor with flexible routing in semiconductor dies

Method for fabricating a self-aligned emitter in a bipolar transistor

Bipolar transistor with reduced base resistance

Method for fabricating a top conductive layer in a semiconductor die and related structure

Method for fabricating a high density composite MIM capacitor with reduced voltage dependence in semiconductor dies

Method for fabricating a selective eptaxial HBT emitter

Method for fabrication of an MIM capacitor and related structure

Method for fabricating a high density composite MIM capacitor with flexible routing in semiconductor dies

Temperature insensitive resistor in an IC chip

Fabricating a top conductive layer in a semiconductor die

Method for fabricating a frontside through-wafer via in a processed wafer and related structure

Method for opening a semiconductor region for fabricating an HBT

Composite ground shield for passive components in a semiconductor die

Method for reducing extrinsic base resistance and improving manufacturability in an NPN transistor

Method for fabricating a self-aligned emitter in a bipolar transistor

Method for eliminating collector-base band gap in an HBT

Structure for a selective epitaxial HBT emitter

Structure for reduction of base and emitter resistance and related method

Method for reducing base resistance in a bipolar transistor

High gain bipolar transistor

Method for fabricating a self-aligned bipolar transistor and related structure

Double-implant high performance varactor and method for manufacturing same

Deep N wells in triple well structures and method for fabricating same

NPN transistor having reduced extrinsic base resistance and improved manufacturability

Low cost fabrication of high resistivity resistors

Reducing extrinsic base resistance in an NPN transistor

Structure for eliminating collector-base band gap discontinuity in an HBT

Reduced base resistance in a bipolar transistor

Method for forming a semiconductor structure having a porous semiconductor layer in RF devices

Semiconductor structure having porous semiconductor segment for RF devices and bulk semiconductor region for non-RF devices

Semiconductor structure having porous semiconductor layer for RF devices

High performance SiGe heterojunction bipolar transistors built on thin-film silicon-on-insulator substrates for radio frequency applications

Bulk CMOS RF switch with reduced parasitic capacitance

Method for forming deep silicon via for grounding of circuits and devices, emitter ballasting and isolation

High performance SiGe heterojunction bipolar transistors built on thin film silicon-on-insulator substrates for radio frequency applications

Structure and method for mitigating substrate parasitics in bulk high resistivity substrate technology

NPN transistor having reduced extrinsic base resistance and improved manufacturability

MOTOROLA INC

Method of adjusting a threshold voltage for a semiconductor device fabricated on a semiconductor on insulator substrate

Fabrication method for a semiconductor device on a semiconductor on insulator substrate using a two stage threshold adjust implant

Simultaneously measuring thickness and composition of a film

Semiconductor-on-insulator device having a laterally-graded channel region and method of making

Reduced stress isolation for SOI devices and a method for fabricating

Method of forming an isolation oxide for silicon-on-insulator technology

Method for fabricating a semiconductor on insulator device

KAR-ROY ARJUN

Method for fabricating a backside through-wafer via in a processed wafer and related structure

Deep N wells in triple well structures

SKYWORKS SOLUTIONS INC

High performance BiFET low noise amplifier

BLASCHKE VOLKER

Deep silicon via for grounding of circuits and devices, emitter ballasting and isolation

NEWPORT FAB DBA JAZZ SEMICOND

Composite series resistor having reduced temperature sensitivity in an IC chip