Inventor
GOUSEV EVGENI P
US28 patents
⚠️ This page may combine multiple inventors who share the name “GOUSEV EVGENI P”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
18 patentsUS7105889B2Sep 12, 2006
Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high k dielectrics
IBM93 citations99
US6444592B1Sep 3, 2002
Interfacial oxidation process for high-k gate dielectric process integration
IBM191 citations98
US7479683B2Jan 20, 2009
Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high-k dielectrics
IBM35 citations96
US6511873B2Jan 28, 2003
High-dielectric constant insulators for FEOL capacitors
IBM38 citations96
US7029966B2Apr 18, 2006
Process options of forming silicided metal gates for advanced CMOS devices
IBM53 citations95
US7928514B2Apr 19, 2011
Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high-k dielectrics
IBM12 citations93
US7452767B2Nov 18, 2008
Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high k dielectrics
IBM15 citations93
US7242055B2Jul 10, 2007
Nitrogen-containing field effect transistor gate stack containing a threshold voltage control layer formed via deposition of a metal oxide
IBM51 citations93
US7326610B2Feb 5, 2008
Process options of forming silicided metal gates for advanced CMOS devices
IBM34 citations92
US7655994B2Feb 2, 2010
Low threshold voltage semiconductor device with dual threshold voltage control means
IBM21 citations91
US7858500B2Dec 28, 2010
Low threshold voltage semiconductor device with dual threshold voltage control means
IBM12 citations84
US7745278B2Jun 29, 2010
Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high K dielectrics
IBM10 citations84
US7560361B2Jul 14, 2009
Method of forming gate stack for semiconductor electronic device
IBM18 citations84
US6667207B2Dec 23, 2003
High-dielectric constant insulators for FEOL capacitors
IBM12 citations74
US6887797B2May 3, 2005
Apparatus and method for forming an oxynitride insulating layer on a semiconductor wafer
IBM4 citations72
US6958506B2Oct 25, 2005
High-dielectric constant insulators for feol capacitors
IBM3 citations63
US6436196B1Aug 20, 2002
Apparatus and method for forming an oxynitride insulating layer on a semiconductor wafer
IBM4 citations61
US6346487B1Feb 12, 2002
Apparatus and method for forming an oxynitride insulating layer on a semiconductor wafer
IBM4 citations61