Inventor

LIU TSU-JAE KING

US12 patents

⚠️ This page may combine multiple inventors who share the name “LIU TSU-JAE KING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SYNOPSYS INC

7 patents

US7605449B2Oct 20, 2009

Enhanced segmented channel MOS transistor with high-permittivity dielectric isolation material

SYNOPSYS INC336 citations98

US7508031B2Mar 24, 2009

Enhanced segmented channel MOS transistor with narrowed base regions

SYNOPSYS INC343 citations98

US7807523B2Oct 5, 2010

Sequential selective epitaxial growth

SYNOPSYS INC34 citations92

US7560201B2Jul 14, 2009

Patterning a single integrated circuit layer using multiple masks and multiple masking layers

SYNOPSYS INC11 citations83

US7995380B2Aug 9, 2011

Negative differential resistance pull up element for DRAM

SYNOPSYS INC5 citations72

US8592109B2Nov 26, 2013

Patterning a single integrated circuit layer using automatically-generated masks and multiple masking layers

SYNOPSYS INC0 citations51

US7494933B2Feb 24, 2009

Method for achieving uniform etch depth using ion implantation and a timed etch

SYNOPSYS INC1 citations51

UNIV CALIFORNIA

2 patents

US7710771B2May 4, 2010

Method and apparatus for capacitorless double-gate storage

UNIV CALIFORNIA8 citations83

US8043943B2Oct 25, 2011

Low-temperature formation of polycrystalline semiconductor films via enhanced metal-induced crystallization

UNIV CALIFORNIA10 citations79

LIU TSU-JAE KING

2 patents

US9355860B2May 31, 2016

Method for achieving uniform etch depth using ion implantation and a timed etch

LIU TSU-JAE KING0 citations46

US8399183B2Mar 19, 2013

Patterning a single integrated circuit layer using automatically-generated masks and multiple masking layers

LIU TSU-JAE KING0 citations46

KWON WOOKHYUN

1 patent

US8686497B2Apr 1, 2014

DRAM cell utilizing a doubly gated vertical channel

KWON WOOKHYUN3 citations54