Inventor
HABEL FRANK
DE20 patents
⚠️ This page may combine multiple inventors who share the name “HABEL FRANK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FREIBERGER COMPOUND MAT GMBH
10 patentsUS7727332B2Jun 1, 2010
Process for selective masking of III-N layers and for the preparation of free-standing III-N layers or of devices, and products obtained thereby
FREIBERGER COMPOUND MAT GMBH267 citations96
US10309037B2Jun 4, 2019
Method for producing III-N templates and the reprocessing thereof and III-N template
FREIBERGER COMPOUND MAT GMBH1 citations70
US9461121B2Oct 4, 2016
Process for the manufacture of a doped III-N bulk crystal and a free-standing III-N substrate, and doped III-N bulk crystal and free-standing III-N substrate as such
FREIBERGER COMPOUND MAT GMBH4 citations69
US8048224B2Nov 1, 2011
Process for producing a III-N bulk crystal and a free-standing III-N substrate, and III-N bulk crystal and free-standing III-N substrate
FREIBERGER COMPOUND MAT GMBH3 citations61
US7998273B2Aug 16, 2011
Method for producing III-N layers, and III-N layers or III-N substrates, and devices based thereon
FREIBERGER COMPOUND MAT GMBH2 citations61
US12168839B2Dec 17, 2024
Growth of A-B crystals without crystal lattice curvature
FREIBERGER COMPOUND MAT GMBH0 citations60
US10883191B2Jan 5, 2021
Method for producing III-N templates and the reprocessing thereof and III-N template
FREIBERGER COMPOUND MAT GMBH0 citations60
US10662549B2May 26, 2020
Growth of A-B crystals without crystal lattice curvature
FREIBERGER COMPOUND MAT GMBH0 citations50
US10584427B2Mar 10, 2020
Processes for producing III-N single crystals, and III-N single crystal
FREIBERGER COMPOUND MAT GMBH0 citations44
US9896779B2Feb 20, 2018
Method for producing III-N single crystals, and III-N single crystal
FREIBERGER COMPOUND MAT GMBH0 citations44
RHEINMETALL WAFFE MUNITION GMBH
5 patentsUS11054231B2Jul 6, 2021
Stun grenade having an adjustable switch mechanism to connect different effect chambers simultaneously to a delay set
RHEINMETALL WAFFE MUNITION GMBH4 citations64
US11835326B2Dec 5, 2023
Igniter with a delay time that can be set
RHEINMETALL WAFFE MUNITION GMBH0 citations56
US10996034B2May 4, 2021
Irritation member
RHEINMETALL WAFFE MUNITION GMBH1 citations49
US12196536B2Jan 14, 2025
Pyrotechnic object
RHEINMETALL WAFFE MUNITION GMBH0 citations45
USD872823SJan 14, 2020
Pyrotechnic article
RHEINMETALL WAFFE MUNITION GMBH0 citations42
LEIBIGER GUNNAR
2 patentsUS9856579B2Jan 2, 2018
Method and device for manufacturing semiconductor compound materials by means of vapour phase epitaxy
LEIBIGER GUNNAR0 citations46
US9074297B2Jul 7, 2015
Method and device for manufacturing semiconductor compound materials by means of vapour phase epitaxy
LEIBIGER GUNNAR1 citations46
SCHOLZ FERDINAND
2 patentsUS9115444B2Aug 25, 2015
Method for producing III-N layers, and III-N layers or III-N substrates, and devices based thereon
SCHOLZ FERDINAND0 citations44
US8778078B2Jul 15, 2014
Process for the manufacture of a doped III-N bulk crystal and a free-standing III-N substrate, and doped III-N bulk crystal and free-standing III-N substrate as such
SCHOLZ FERDINAND1 citations44