Inventor
SU RU-YI
TW56 patents
⚠️ This page may combine multiple inventors who share the name “SU RU-YI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
26 patentsUS10411681B2Sep 10, 2019
Semiconductor device and circuit protecting method
TAIWAN SEMICONDUCTOR MFG CO LTD11 citations84
US9882553B2Jan 30, 2018
Semiconductor device and circuit protecting method
TAIWAN SEMICONDUCTOR MFG CO LTD11 citations84
US9673323B2Jun 6, 2017
Embedded JFETs for high voltage applications
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US9443969B2Sep 13, 2016
Transistor having metal diffusion barrier
TAIWAN SEMICONDUCTOR MFG CO LTD10 citations84
US10535730B2Jan 14, 2020
High voltage metal-oxide-semiconductor (HVMOS) device integrated with a high voltage junction termination (HVJT) device
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations83
US11854909B2Dec 26, 2023
Semiconductor structure and method for manufacturing thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10319644B2Jun 11, 2019
Method for manufacturing semiconductor structure
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9627275B1Apr 18, 2017
Hybrid semiconductor structure on a common substrate
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11145713B2Oct 12, 2021
High voltage metal-oxide-semiconductor (HVMOS) device integrated with a high voltage junction termination (HVJT) device
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations72
US11676997B2Jun 13, 2023
High voltage resistor with high voltage junction termination
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US9035379B2May 19, 2015
High voltage and ultra-high voltage semiconductor devices with increased breakdown voltages
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations63
US12563819B2Feb 24, 2026
Semiconductor structure and method for manufacturing thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12507456B2Dec 23, 2025
Electrode structure for vertical group III-V device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11908905B2Feb 20, 2024
Electrode structure for vertical group III-V device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11450749B2Sep 20, 2022
Electrode structure for vertical group III-V device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11430702B2Aug 30, 2022
Semiconductor structure and method for manufacturing thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11069805B2Jul 20, 2021
Embedded JFETs for high voltage applications
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12267006B2Apr 1, 2025
Forming integrated electronic devices for converting and downscaling alternating current
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations57
US10868134B2Dec 15, 2020
Method of making transistor having metal diffusion barrier
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10686032B2Jun 16, 2020
High voltage resistor with high voltage junction termination
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10510882B2Dec 17, 2019
Embedded JFETs for high voltage applications
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10121890B2Nov 6, 2018
High voltage transistor structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10103223B2Oct 16, 2018
High voltage resistor with pin diode isolation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9793385B2Oct 17, 2017
Insulated gate bipolar transistor structure having low substrate leakage
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9660108B2May 23, 2017
Bootstrap MOS for high voltage applications
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9190476B2Nov 17, 2015
High voltage and ultra-high voltage semiconductor devices with increased breakdown voltages
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
TAIWAN SEMICONDUCTOR MFG
13 patentsUS9190535B2Nov 17, 2015
Bootstrap MOS for high voltage applications
TAIWAN SEMICONDUCTOR MFG12 citations84
US8969913B2Mar 3, 2015
Insulated gate bipolar transistor structure having low substrate leakage
TAIWAN SEMICONDUCTOR MFG5 citations84
US7816744B2Oct 19, 2010
Gate electrodes of HVMOS devices having non-uniform doping concentrations
TAIWAN SEMICONDUCTOR MFG7 citations74
US9257533B2Feb 9, 2016
Method of making an insulated gate bipolar transistor structure
TAIWAN SEMICONDUCTOR MFG2 citations63
US9391195B2Jul 12, 2016
High side gate driver device
TAIWAN SEMICONDUCTOR MFG0 citations52
US9385178B2Jul 5, 2016
High voltage resistor with PIN diode isolation
TAIWAN SEMICONDUCTOR MFG0 citations52
US9379188B2Jun 28, 2016
Insulated gate bipolar transistor structure having low substrate leakage
TAIWAN SEMICONDUCTOR MFG0 citations52
US9331195B2May 3, 2016
Source tip optimization for high voltage transistor devices which includes a P-body extension region
TAIWAN SEMICONDUCTOR MFG0 citations52
US9306012B2Apr 5, 2016
Strip-ground field plate
TAIWAN SEMICONDUCTOR MFG1 citations52
US9299694B2Mar 29, 2016
Stacked and tunable power fuse
TAIWAN SEMICONDUCTOR MFG0 citations52
US9257979B2Feb 9, 2016
Embedded JFETs for high voltage applications
TAIWAN SEMICONDUCTOR MFG0 citations52
US9224827B2Dec 29, 2015
High voltage resistor
TAIWAN SEMICONDUCTOR MFG0 citations52
US9214547B2Dec 15, 2015
Insulated gate bipolar transistor structure having low substrate leakage
TAIWAN SEMICONDUCTOR MFG0 citations52
SU RU-YI
6 patentsUS8159029B2Apr 17, 2012
High voltage device having reduced on-state resistance
SU RU-YI21 citations92
US9373619B2Jun 21, 2016
High voltage resistor with high voltage junction termination
SU RU-YI11 citations84
US8629513B2Jan 14, 2014
HV interconnection solution using floating conductors
SU RU-YI10 citations84
US8624322B1Jan 7, 2014
High voltage device with a parallel resistor
SU RU-YI15 citations84
US8680616B2Mar 25, 2014
High side gate driver device
SU RU-YI5 citations73
US8158475B2Apr 17, 2012
Gate electrodes of HVMOS devices having non-uniform doping concentrations
SU RU-YI2 citations62
CHENG CHIH-CHANG
2 patentsHUO KER HSIAO
2 patentsYEH JEN-HAO
1 patentShowing the top 50 of 56 patents by PatentIndex Score.