P

Inventor

YANG FU-CHIH

TW99 patents
⚠️ This page may combine multiple inventors who share the name “YANG FU-CHIH”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

21 patents
US11404557B2Aug 2, 2022

Method of forming a high electron mobility transistor

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations84
US10050117B2Aug 14, 2018

Method of forming a high electron mobility transistor

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US9704968B2Jul 11, 2017

Method of forming a high electron mobility transistor

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations84
US9673323B2Jun 6, 2017

Embedded JFETs for high voltage applications

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US9443969B2Sep 13, 2016

Transistor having metal diffusion barrier

TAIWAN SEMICONDUCTOR MFG CO LTD10 citations84
US9680009B2Jun 13, 2017

High voltage semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD8 citations83
US11410991B2Aug 9, 2022

Series resistor over drain region in high voltage device

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10923467B2Feb 16, 2021

Series resistor over drain region in high voltage device

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10867990B2Dec 15, 2020

Series resistor over drain region in high voltage device

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10790375B2Sep 29, 2020

High electron mobility transistor

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10741665B2Aug 11, 2020

Method of forming a high electron mobility transistor

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9508807B2Nov 29, 2016

Method of forming high electron mobility transistor

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US12230690B2Feb 18, 2025

Method of forming a high electron mobility transistor

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11804538B2Oct 31, 2023

Method of forming a high electron mobility transistor

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11676997B2Jun 13, 2023

High voltage resistor with high voltage junction termination

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US9911734B2Mar 6, 2018

Semiconductor device containing HEMT and MISFET and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US9583588B2Feb 28, 2017

Method of making high electron mobility transistor structure

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US9035379B2May 19, 2015

High voltage and ultra-high voltage semiconductor devices with increased breakdown voltages

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations63
US11069805B2Jul 20, 2021

Embedded JFETs for high voltage applications

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10868134B2Dec 15, 2020

Method of making transistor having metal diffusion barrier

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10868135B2Dec 15, 2020

High electron mobility transistor structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52

TAIWAN SEMICONDUCTOR MFG

8 patents

SU RU-YI

4 patents

WONG KING-YUEN

3 patents

Yao fu-wei

2 patents

CHENG CHIH-CHANG

2 patents

CHEN PO-CHIH

2 patents

HUO KER HSIAO

2 patents

YU CHEN-JU

2 patents

HSU CHUN-WEI

1 patent

YEH JEN-HAO

1 patent

HSIUNG CHIH-WEN

1 patent

HSIA SHOULI STEVE

1 patent

Showing the top 50 of 99 patents by PatentIndex Score.