Inventor
TAPILY KANDABARA N
US42 patents
Patents
42 patentsUS10833078B2Nov 10, 2020
Semiconductor apparatus having stacked gates and method of manufacture thereof
TOKYO ELECTRON LTD34 citations94
US10522343B2Dec 31, 2019
Method of enhancing high-k film nucleation rate and electrical mobility in a semiconductor device by microwave plasma treatment
TOKYO ELECTRON LTD40 citations94
US10283369B2May 7, 2019
Atomic layer etching using a boron-containing gas and hydrogen fluoride gas
TOKYO ELECTRON LTD5 citations84
US10068764B2Sep 4, 2018
Selective metal oxide deposition using a self-assembled monolayer surface pretreatment
TOKYO ELECTRON LTD7 citations84
US10049913B2Aug 14, 2018
Methods for SiO2 filling of fine recessed features and selective SiO2 deposition on catalytic surfaces
TOKYO ELECTRON LTD7 citations84
US9893161B2Feb 13, 2018
Parasitic capacitance reduction structure for nanowire transistors and method of manufacturing
TOKYO ELECTRON LTD11 citations84
US9882026B2Jan 30, 2018
Method for forming a nanowire structure
TOKYO ELECTRON LTD7 citations84
US10378105B2Aug 13, 2019
Selective deposition with surface treatment
TOKYO ELECTRON LTD12 citations83
US10453749B2Oct 22, 2019
Method of forming a self-aligned contact using selective SiO2 deposition
TOKYO ELECTRON LTD9 citations80
US11443953B2Sep 13, 2022
Method for forming and using stress-tuned silicon oxide films in semiconductor device patterning
TOKYO ELECTRON LTD2 citations73
US10453681B2Oct 22, 2019
Method of selective vertical growth of a dielectric material on a dielectric substrate
TOKYO ELECTRON LTD5 citations73
US10410858B2Sep 10, 2019
Selective film deposition using halogen deactivation
TOKYO ELECTRON LTD2 citations73
US10217670B2Feb 26, 2019
Wrap-around contact integration scheme
TOKYO ELECTRON LTD2 citations73
US10014213B2Jul 3, 2018
Selective bottom-up metal feature filling for interconnects
TOKYO ELECTRON LTD4 citations73
US9984890B2May 29, 2018
Isotropic silicon and silicon-germanium etching with tunable selectivity
TOKYO ELECTRON LTD6 citations73
US9837304B2Dec 5, 2017
Sidewall protection scheme for contact formation
TOKYO ELECTRON LTD2 citations73
US12494362B2Dec 9, 2025
Atomic layer deposition of aluminum oxide films for semiconductor devices using an aluminum alkoxide oxidizer
TOKYO ELECTRON LTD0 citations62
US12284820B2Apr 22, 2025
Dual metal wrap-around contacts for semiconductor devices
TOKYO ELECTRON LTD0 citations62
US11804376B2Oct 31, 2023
Method for mitigating lateral film growth in area selective deposition
TOKYO ELECTRON LTD0 citations62
US11658066B2May 23, 2023
Method for reducing lateral film formation in area selective deposition
TOKYO ELECTRON LTD0 citations62
US11443949B2Sep 13, 2022
Method of selectively forming metal silicides for semiconductor devices
TOKYO ELECTRON LTD1 citations62
US11444082B2Sep 13, 2022
Semiconductor apparatus having stacked gates and method of manufacture thereof
TOKYO ELECTRON LTD1 citations62
US11374101B2Jun 28, 2022
Dual metal wrap-around contacts for semiconductor devices
TOKYO ELECTRON LTD0 citations62
US10790149B2Sep 29, 2020
Method of forming crystallographically stabilized ferroelectric hafnium zirconium based films for semiconductor devices
TOKYO ELECTRON LTD1 citations62
US10790156B2Sep 29, 2020
Atomic layer etching using a boron-containing gas and hydrogen fluoride gas
TOKYO ELECTRON LTD1 citations62
US10580644B2Mar 3, 2020
Method and apparatus for selective film deposition using a cyclic treatment
TOKYO ELECTRON LTD1 citations62
US10580650B2Mar 3, 2020
Method for bottom-up formation of a film in a recessed feature
TOKYO ELECTRON LTD1 citations62
US10529584B2Jan 7, 2020
In-situ selective deposition and etching for advanced patterning applications
TOKYO ELECTRON LTD1 citations62
US10580658B2Mar 3, 2020
Method for preferential oxidation of silicon in substrates containing silicon and germanium
TOKYO ELECTRON LTD0 citations52
US10483109B2Nov 19, 2019
Self-aligned spacer formation
TOKYO ELECTRON LTD0 citations52
US10453737B2Oct 22, 2019
Method of filling retrograde recessed features with no voids
TOKYO ELECTRON LTD0 citations52
US10410861B2Sep 10, 2019
Method of filling retrograde recessed features
TOKYO ELECTRON LTD0 citations52
US10381234B2Aug 13, 2019
Selective film formation for raised and recessed features using deposition and etching processes
TOKYO ELECTRON LTD0 citations52
US10217825B2Feb 26, 2019
Metal-insulator-semiconductor (MIS) contacts and method of forming
TOKYO ELECTRON LTD0 citations52
US10115601B2Oct 30, 2018
Selective film formation for raised and recessed features using deposition and etching processes
TOKYO ELECTRON LTD1 citations52
US10079151B2Sep 18, 2018
Method for bottom-up deposition of a film in a recessed feature
TOKYO ELECTRON LTD0 citations52
US10062564B2Aug 28, 2018
Method of selective gas phase film deposition on a substrate by modifying the surface using hydrogen plasma
TOKYO ELECTRON LTD1 citations52
US9607829B2Mar 28, 2017
Method of surface functionalization for high-K deposition
TOKYO ELECTRON LTD0 citations52
US9558962B2Jan 31, 2017
Substrate processing method
TOKYO ELECTRON LTD0 citations52
US12588434B2Mar 24, 2026
Methods for forming dielectric materials with selected polarization for semiconductor devices
TOKYO ELECTRON LTD0 citations50
US10008564B2Jun 26, 2018
Method of corner rounding and trimming of nanowires by microwave plasma
TOKYO ELECTRON LTD0 citations50
US10381448B2Aug 13, 2019
Wrap-around contact integration scheme
TOKYO ELECTRON LTD0 citations42