Inventor
CHENG CHIH-CHANG
TW75 patents
⚠️ This page may combine multiple inventors who share the name “CHENG CHIH-CHANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
32 patentsUS11088085B2Aug 10, 2021
Layout to reduce noise in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US9673323B2Jun 6, 2017
Embedded JFETs for high voltage applications
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US11107899B2Aug 31, 2021
Plate design to decrease noise in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10714432B1Jul 14, 2020
Layout to reduce noise in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10658482B2May 19, 2020
Plate design to decrease noise in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9917212B1Mar 13, 2018
JFET structure and manufacturing method of the same
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US9466715B2Oct 11, 2016
MOS transistor having a gate dielectric with multiple thicknesses
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations73
US11676997B2Jun 13, 2023
High voltage resistor with high voltage junction termination
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US9583610B2Feb 28, 2017
Transistor and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US9035379B2May 19, 2015
High voltage and ultra-high voltage semiconductor devices with increased breakdown voltages
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations63
US12469798B2Nov 11, 2025
Layout to reduce noise in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12176407B2Dec 24, 2024
Method of forming a transistor device with a gate structure having a pair of recess regions and a resistive protection layer within
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12074208B2Aug 27, 2024
Method of making triple well isolated diode
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11923429B2Mar 5, 2024
Plate design to decrease noise in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11817396B2Nov 14, 2023
Layout to reduce noise in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11769812B2Sep 26, 2023
Semiconductor device having multiple wells and method of making
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11158739B2Oct 26, 2021
Semiconductor structure having field plate and associated fabricating method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11069805B2Jul 20, 2021
Embedded JFETs for high voltage applications
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11011610B2May 18, 2021
Plate design to decrease noise in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10957772B2Mar 23, 2021
Semiconductor device having multiple wells
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10205024B2Feb 12, 2019
Semiconductor structure having field plate and associated fabricating method
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11532701B2Dec 20, 2022
Semiconductor isolation structure and method for making the semiconductor isolation structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11444169B2Sep 13, 2022
Transistor device with a gate structure having recesses overlying an interface between isolation and device regions
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10686032B2Jun 16, 2020
High voltage resistor with high voltage junction termination
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10510882B2Dec 17, 2019
Embedded JFETs for high voltage applications
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10497795B2Dec 3, 2019
Triple well isolated diode and method of making
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10121890B2Nov 6, 2018
High voltage transistor structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10103223B2Oct 16, 2018
High voltage resistor with pin diode isolation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9917168B2Mar 13, 2018
Metal oxide semiconductor field effect transistor having variable thickness gate dielectric
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9793385B2Oct 17, 2017
Insulated gate bipolar transistor structure having low substrate leakage
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9735244B2Aug 15, 2017
Quasi-vertical structure having a sidewall implantation for high voltage MOS device and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9660108B2May 23, 2017
Bootstrap MOS for high voltage applications
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
TAIWAN SEMICONDUCTOR MFG
7 patentsUS9190535B2Nov 17, 2015
Bootstrap MOS for high voltage applications
TAIWAN SEMICONDUCTOR MFG12 citations84
US8969913B2Mar 3, 2015
Insulated gate bipolar transistor structure having low substrate leakage
TAIWAN SEMICONDUCTOR MFG5 citations84
US9000517B2Apr 7, 2015
Power MOSFETs and methods for forming the same
TAIWAN SEMICONDUCTOR MFG6 citations83
US9257533B2Feb 9, 2016
Method of making an insulated gate bipolar transistor structure
TAIWAN SEMICONDUCTOR MFG2 citations63
US9159827B2Oct 13, 2015
Transistor and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG1 citations63
US9013004B2Apr 21, 2015
Quasi-vertical structure having a sidewall implantation for high voltage MOS device
TAIWAN SEMICONDUCTOR MFG2 citations63
US9356139B2May 31, 2016
Power MOSFETs and methods for forming the same
TAIWAN SEMICONDUCTOR MFG1 citations62
CHENG CHIH-CHANG
5 patentsUS8598679B2Dec 3, 2013
Stacked and tunable power fuse
CHENG CHIH-CHANG8 citations84
US8664718B2Mar 4, 2014
Power MOSFETs and methods for forming the same
CHENG CHIH-CHANG12 citations83
US8587073B2Nov 19, 2013
High voltage resistor
CHENG CHIH-CHANG8 citations83
US8445955B2May 21, 2013
Quasi-vertical structure for high voltage MOS device
CHENG CHIH-CHANG9 citations83
US8704312B2Apr 22, 2014
High voltage devices and methods of forming the high voltage devices
CHENG CHIH-CHANG3 citations60
SU RU-YI
3 patentsHUO KER HSIAO
2 patentsYEH JEN-HAO
1 patentShowing the top 50 of 75 patents by PatentIndex Score.