Inventor
LIU RUEY-HSIN
TW158 patents
⚠️ This page may combine multiple inventors who share the name “LIU RUEY-HSIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG
21 patentsUS7221021B2May 22, 2007
Method of forming high voltage devices with retrograde well
TAIWAN SEMICONDUCTOR MFG120 citations98
US6924531B2Aug 2, 2005
LDMOS device with isolation guard rings
TAIWAN SEMICONDUCTOR MFG81 citations98
US9171931B2Oct 27, 2015
Trench power MOSFET
TAIWAN SEMICONDUCTOR MFG12 citations92
US6340833B1Jan 22, 2002
Integrated circuit polysilicon resistor having a silicide extension to achieve 100 % metal shielding from hydrogen intrusion
TAIWAN SEMICONDUCTOR MFG16 citations92
US6323074B1Nov 27, 2001
High voltage ESD protection device with very low snapback voltage by adding as a p+ diffusion and n-well to the NMOS drain
TAIWAN SEMICONDUCTOR MFG44 citations92
US6165861ADec 26, 2000
Integrated circuit polysilicon resistor having a silicide extension to achieve 100% metal shielding from hydrogen intrusion
TAIWAN SEMICONDUCTOR MFG29 citations92
US7372104B2May 13, 2008
High voltage CMOS devices
TAIWAN SEMICONDUCTOR MFG22 citations91
US8890240B2Nov 18, 2014
Apparatus and method for power MOS transistor
TAIWAN SEMICONDUCTOR MFG5 citations84
US7602037B2Oct 13, 2009
High voltage semiconductor devices and methods for fabricating the same
TAIWAN SEMICONDUCTOR MFG15 citations84
US7525150B2Apr 28, 2009
High voltage double diffused drain MOS transistor with medium operation voltage
TAIWAN SEMICONDUCTOR MFG9 citations84
US7525155B2Apr 28, 2009
High voltage transistor structure for semiconductor device
TAIWAN SEMICONDUCTOR MFG8 citations84
US7196375B2Mar 27, 2007
High-voltage MOS transistor
TAIWAN SEMICONDUCTOR MFG11 citations84
US9000517B2Apr 7, 2015
Power MOSFETs and methods for forming the same
TAIWAN SEMICONDUCTOR MFG6 citations83
US6569730B2May 27, 2003
High voltage transistor using P+ buried layer
TAIWAN SEMICONDUCTOR MFG13 citations83
US7719064B2May 18, 2010
High voltage CMOS devices
TAIWAN SEMICONDUCTOR MFG8 citations82
US7521741B2Apr 21, 2009
Shielding structures for preventing leakages in high voltage MOS devices
TAIWAN SEMICONDUCTOR MFG9 citations82
US7476591B2Jan 13, 2009
Lateral power MOSFET with high breakdown voltage and low on-resistance
TAIWAN SEMICONDUCTOR MFG6 citations74
US7045414B2May 16, 2006
Method of fabricating high voltage transistor
TAIWAN SEMICONDUCTOR MFG8 citations74
US7989890B2Aug 2, 2011
Lateral power MOSFET with high breakdown voltage and low on-resistance
TAIWAN SEMICONDUCTOR MFG6 citations73
US6590262B2Jul 8, 2003
High voltage ESD protection device with very low snapback voltage
TAIWAN SEMICONDUCTOR MFG7 citations73
US6245609B1Jun 12, 2001
High voltage transistor using P+ buried layer
TAIWAN SEMICONDUCTOR MFG8 citations73
TAIWAN SEMICONDUCTOR MFG CO LTD
13 patentsUS11088085B2Aug 10, 2021
Layout to reduce noise in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US9871133B2Jan 16, 2018
Lateral DMOS device with dummy gate
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US9698227B2Jul 4, 2017
FinFET with trench field plate
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US11107899B2Aug 31, 2021
Plate design to decrease noise in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10714432B1Jul 14, 2020
Layout to reduce noise in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10658482B2May 19, 2020
Plate design to decrease noise in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10510880B2Dec 17, 2019
Trench power MOSFET
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10170589B2Jan 1, 2019
Vertical power MOSFET and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10164085B2Dec 25, 2018
Apparatus and method for power MOS transistor
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9917212B1Mar 13, 2018
JFET structure and manufacturing method of the same
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US9466715B2Oct 11, 2016
MOS transistor having a gate dielectric with multiple thicknesses
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations73
US9412844B2Aug 9, 2016
Trench power MOSFET
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10985256B2Apr 20, 2021
Semiconductor device and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
CHENG CHIH-CHANG
4 patentsUS8598679B2Dec 3, 2013
Stacked and tunable power fuse
CHENG CHIH-CHANG8 citations84
US8664718B2Mar 4, 2014
Power MOSFETs and methods for forming the same
CHENG CHIH-CHANG12 citations83
US8587073B2Nov 19, 2013
High voltage resistor
CHENG CHIH-CHANG8 citations83
US8445955B2May 21, 2013
Quasi-vertical structure for high voltage MOS device
CHENG CHIH-CHANG9 citations83
SU RU-YI
3 patentsSU PO-CHIH
2 patentsNG CHUN-WAI
2 patentsCHOU HSUEH-LIANG
2 patentsHUANG TSUNG-YI
1 patentYAO CHIH-WEN
1 patentWU CHEN-BAU
1 patentShowing the top 50 of 158 patents by PatentIndex Score.