Inventor
HANEDA SHIGERU
JP32 patents
⚠️ This page may combine multiple inventors who share the name “HANEDA SHIGERU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOSHIBA KK
26 patentsUS6937447B2Aug 30, 2005
Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory
TOSHIBA KK82 citations98
US7120049B2Oct 10, 2006
Magnetic cell and magnetic memory
TOSHIBA KK32 citations96
US6956766B2Oct 18, 2005
Magnetic cell and magnetic memory
TOSHIBA KK47 citations96
US6914807B2Jul 5, 2005
Magnetic logic element and magnetic logic element array
TOSHIBA KK52 citations96
US7532503B2May 12, 2009
Magnetic recording element, magnetic recording apparatus and recording method of information
TOSHIBA KK44 citations93
US7372727B2May 13, 2008
Magnetic cell and magnetic memory
TOSHIBA KK13 citations93
US7126848B2Oct 24, 2006
Magnetic cell and magnetic memory
TOSHIBA KK17 citations93
US7042762B2May 9, 2006
Magnetic element and magnetic element array
TOSHIBA KK33 citations93
US6906949B1Jun 14, 2005
Magnetic element and magnetic element array
TOSHIBA KK19 citations93
US7598578B2Oct 6, 2009
Magnetic element and signal processing device
TOSHIBA KK28 citations92
US7558103B2Jul 7, 2009
Magnetic switching element and signal processing device using the same
TOSHIBA KK23 citations92
US7381480B2Jun 3, 2008
Magnetic recording element and magnetic recording device using the same
TOSHIBA KK40 citations92
US7240419B2Jul 10, 2007
Method of manufacturing a magnetoresistance effect element
TOSHIBA KK14 citations92
US7486486B2Feb 3, 2009
Magnetic device to reduce reversal current in current-driven magnetic reversal and magnetic memory using same
TOSHIBA KK15 citations84
US7355883B2Apr 8, 2008
Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory
TOSHIBA KK10 citations84
US7265950B2Sep 4, 2007
Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory
TOSHIBA KK10 citations84
US7446348B2Nov 4, 2008
Light emitting device with filled tetrahedral (FT) semiconductor in the active layer
TOSHIBA KK8 citations74
US7269059B2Sep 11, 2007
Magnetic recording element and device
TOSHIBA KK7 citations74
US7126849B2Oct 24, 2006
Magnetic cell and magnetic memory
TOSHIBA KK6 citations74
US7042758B2May 9, 2006
Magnetic cell and magnetic memory
TOSHIBA KK7 citations68
US7710690B2May 4, 2010
Magneto-resistance effect element capable of obtaining a reproducing signal with a high quality
TOSHIBA KK5 citations63
US7561385B2Jul 14, 2009
Magneto-resistive element in which a free layer includes ferromagnetic layers and a non-magnetic layer interposed therebetween
TOSHIBA KK4 citations63
US7550779B2Jun 23, 2009
Light emitting device with filled tetrahedral (FT) semiconductor in the active layer
TOSHIBA KK4 citations63
US7494724B2Feb 24, 2009
Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory
TOSHIBA KK3 citations63
US7075755B2Jul 11, 2006
Magneto-resistance effect element with magnetism sensitive region controlled by voltage applied to gate electrode
TOSHIBA KK2 citations62
US7977693B2Jul 12, 2011
Semiconductor light-emitting material with tetrahedral structure formed therein
TOSHIBA KK1 citations52
HITACHI HIGH TECH CORP
3 patentsUS12198892B2Jan 14, 2025
Sample holder and charged particle beam apparatus
HITACHI HIGH TECH CORP0 citations62
US10431417B2Oct 1, 2019
Charged particle beam device and sample holder
HITACHI HIGH TECH CORP0 citations41
US9171695B2Oct 27, 2015
Stage apparatus and sample observation apparatus
HITACHI HIGH TECH CORP0 citations40