Inventor

WITTERS LIESBETH

BE21 patents

⚠️ This page may combine multiple inventors who share the name “WITTERS LIESBETH”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

WITTERS LIESBETH

IMEC VZW

Internal spacer formation for nanowire semiconductor devices

Semiconductor devices comprising multiple channels and method of making same

Method for forming a transistor structure comprising a fin-shaped channel structure

Internal spacers for nanowire semiconductor devices

Method for forming a field effect transistor device having an electrical contact

Integration of a III-V device on a Si substrate

Method for forming a germanium channel layer for an NMOS transistor device, NMOS transistor device and CMOS device

Low parasitic Ccb heterojunction bipolar transistor

Method for forming a strained semiconductor structure

Method for co-integration of III-V devices with group IV devices

Semiconductor fin structure and method of fabricating the same

Method of forming a semiconductor device comprising at least one germanium nanowire

Method for providing an NMOS device and a PMOS device on a silicon substrate and silicon substrate comprising an NMOS device and a PMOS device

Integration of a III-V construction on a group IV substrate

Contact formation in Ge-containing semiconductor devices

Method for manufacturing a CMOS device and associated device

IMEC

Methods using mask structures for substantially defect-free epitaxial growth

Methods for manufacturing a field-effect semiconductor device

Complementary metal-oxide-semiconductor device comprising silicon and germanium and method for manufacturing thereof

Methods and mask structures for substantially defect-free epitaxial growth

Method for manufacturing a transistor device comprising a germanium based channel layer