P

Inventor

BASLER THOMAS

DE46 patents
⚠️ This page may combine multiple inventors who share the name “BASLER THOMAS”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

INFINEON TECHNOLOGIES AG

29 patents
US10950696B2Mar 16, 2021

Silicon carbide semiconductor component

INFINEON TECHNOLOGIES AG3 citations73
US10886909B2Jan 5, 2021

Electric assembly including an insulated gate bipolar transistor device and a wide-bandgap transistor device

INFINEON TECHNOLOGIES AG3 citations73
US10475909B2Nov 12, 2019

Electric assembly including a bipolar switching device and a wide bandgap transistor

INFINEON TECHNOLOGIES AG5 citations73
US10333387B2Jun 25, 2019

Electric assembly including a semiconductor switching device and a clamping diode

INFINEON TECHNOLOGIES AG2 citations73
US10200028B2Feb 5, 2019

Electric assembly including a reverse conducting switching device and a rectifying device

INFINEON TECHNOLOGIES AG3 citations73
US10651165B2May 12, 2020

Semiconductor device having overload current carrying capability

INFINEON TECHNOLOGIES AG2 citations72
US11552173B2Jan 10, 2023

Silicon carbide device with trench gate

INFINEON TECHNOLOGIES AG2 citations70
US11929397B2Mar 12, 2024

Semiconductor device including trench structure and manufacturing method

INFINEON TECHNOLOGIES AG0 citations62
US11742391B2Aug 29, 2023

Semiconductor component having a diode structure in a SiC semiconductor body

INFINEON TECHNOLOGIES AG0 citations62
US11721689B2Aug 8, 2023

Semiconductor device having a semiconductor channel region and a semiconductor auxiliary region

INFINEON TECHNOLOGIES AG0 citations62
US11626477B2Apr 11, 2023

Silicon carbide field-effect transistor including shielding areas

INFINEON TECHNOLOGIES AG0 citations62
US11410989B2Aug 9, 2022

Semiconductor device having overload current carrying capability

INFINEON TECHNOLOGIES AG0 citations62
US11394194B2Jul 19, 2022

Semiconductor device with surge current protection

INFINEON TECHNOLOGIES AG0 citations62
US11367683B2Jun 21, 2022

Silicon carbide device and method for forming a silicon carbide device

INFINEON TECHNOLOGIES AG0 citations62
US11276754B2Mar 15, 2022

Semiconductor device including trench structure and manufacturing method

INFINEON TECHNOLOGIES AG0 citations62
US11264464B2Mar 1, 2022

Silicon carbide devices and methods for forming silicon carbide devices

INFINEON TECHNOLOGIES AG0 citations62
US11101343B2Aug 24, 2021

Silicon carbide field-effect transistor including shielding areas

INFINEON TECHNOLOGIES AG0 citations62
US11404370B2Aug 2, 2022

Failure structure in semiconductor device

INFINEON TECHNOLOGIES AG0 citations61
US12266694B2Apr 1, 2025

Silicon carbide device with a stripe-shaped trench gate structure

INFINEON TECHNOLOGIES AG0 citations60
US11888032B2Jan 30, 2024

Method of producing a silicon carbide device with a trench gate

INFINEON TECHNOLOGIES AG0 citations60
US11563322B2Jan 24, 2023

RC snubber

INFINEON TECHNOLOGIES AG0 citations56
US11646258B2May 9, 2023

Electronic devices including electrically insulated load electrodes

INFINEON TECHNOLOGIES AG0 citations52
US11437470B2Sep 6, 2022

Silicon carbide semiconductor component

INFINEON TECHNOLOGIES AG0 citations52
US10950690B2Mar 16, 2021

Power electronic arrangement

INFINEON TECHNOLOGIES AG0 citations52
US10644496B2May 5, 2020

Semiconductor device with surge current protection

INFINEON TECHNOLOGIES AG0 citations52
US10404250B2Sep 3, 2019

Transistor device

INFINEON TECHNOLOGIES AG0 citations52
US10038105B2Jul 31, 2018

Semiconductor devices, a semiconductor diode and a method for forming a semiconductor device

INFINEON TECHNOLOGIES AG1 citations52
US11588048B2Feb 21, 2023

Semiconductor device with insulated gate transistor cell and rectifying junction

INFINEON TECHNOLOGIES AG0 citations46
US9923482B2Mar 20, 2018

System and method for a power inverter with controllable clamps

INFINEON TECHNOLOGIES AG0 citations40

INFINEON TECHNOLOGIES AUSTRIA AG

13 patents
US9837288B2Dec 5, 2017

Semiconductor power package and method of manufacturing the same

INFINEON TECHNOLOGIES AUSTRIA AG8 citations83
US10461739B2Oct 29, 2019

Transistor device

INFINEON TECHNOLOGIES AUSTRIA AG4 citations73
US10355116B2Jul 16, 2019

Power semiconductor device

INFINEON TECHNOLOGIES AUSTRIA AG1 citations73
US9979187B2May 22, 2018

Power device with overvoltage arrester

INFINEON TECHNOLOGIES AUSTRIA AG2 citations73
US10734250B2Aug 4, 2020

Method of manufacturing a package having a power semiconductor chip

INFINEON TECHNOLOGIES AUSTRIA AG1 citations72
US10256119B2Apr 9, 2019

Method of manufacturing a semiconductor power package

INFINEON TECHNOLOGIES AUSTRIA AG4 citations72
US9985017B2May 29, 2018

Semiconductor device comprising a clamping structure

INFINEON TECHNOLOGIES AUSTRIA AG2 citations72
US9825023B2Nov 21, 2017

Insulated gate bipolar transistor comprising negative temperature coefficient thermistor

INFINEON TECHNOLOGIES AUSTRIA AG6 citations71
US10680523B2Jun 9, 2020

Electronic circuit with a half-bridge circuit and a voltage clamping element

INFINEON TECHNOLOGIES AUSTRIA AG2 citations70
US11843045B2Dec 12, 2023

Power semiconductor device having overvoltage protection and method of manufacturing the same

INFINEON TECHNOLOGIES AUSTRIA AG0 citations62
US10790384B2Sep 29, 2020

Power semiconductor device having overvoltage protection

INFINEON TECHNOLOGIES AUSTRIA AG1 citations62
US10340264B2Jul 2, 2019

Semiconductor device comprising a clamping structure

INFINEON TECHNOLOGIES AUSTRIA AG0 citations51
US9660029B2May 23, 2017

Semiconductor device having a positive temperature coefficient structure

INFINEON TECHNOLOGIES AUSTRIA AG0 citations42

HUMFELDT DIRK

2 patents

GE ENERGY POWER CONVERSION GMBH

1 patent

BARTHELMESS REINER

1 patent