Inventor
LI JINGHONG
US20 patents
⚠️ This page may combine multiple inventors who share the name “LI JINGHONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
8 patentsUS7696000B2Apr 13, 2010
Low defect Si:C layer with retrograde carbon profile
IBM124 citations98
US8043920B2Oct 25, 2011
finFETS and methods of making same
IBM91 citations97
US9391171B2Jul 12, 2016
Fin field effect transistor including a strained epitaxial semiconductor shell
IBM5 citations84
US8896063B2Nov 25, 2014
FinFET devices containing merged epitaxial Fin-containing contact regions
IBM15 citations84
US8035141B2Oct 11, 2011
Bi-layer nFET embedded stressor element and integration to enhance drive current
IBM15 citations84
US9711416B2Jul 18, 2017
Fin field effect transistor including a strained epitaxial semiconductor shell
IBM2 citations73
US8900934B2Dec 2, 2014
FinFET devices containing merged epitaxial Fin-containing contact regions
IBM4 citations73
US9711417B2Jul 18, 2017
Fin field effect transistor including a strained epitaxial semiconductor shell
IBM0 citations52
CHAN KEVIN K
5 patentsUS8299535B2Oct 30, 2012
Delta monolayer dopants epitaxy for embedded source/drain silicide
CHAN KEVIN K9 citations84
US8410544B2Apr 2, 2013
finFETs and methods of making same
CHAN KEVIN K10 citations83
US9105741B2Aug 11, 2015
Method of replacement source/drain for 3D CMOS transistors
CHAN KEVIN K4 citations73
US8236660B2Aug 7, 2012
Monolayer dopant embedded stressor for advanced CMOS
CHAN KEVIN K2 citations62
US8421191B2Apr 16, 2013
Monolayer dopant embedded stressor for advanced CMOS
CHAN KEVIN K0 citations51