Inventor
FU HOUQIANG
US7 patents
⚠️ This page may combine multiple inventors who share the name “FU HOUQIANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ZHAO YUJI
4 patentsUS11626483B2Apr 11, 2023
Low-leakage regrown GaN p-n junctions for GaN power devices
ZHAO YUJI0 citations58
US11417529B2Aug 16, 2022
Plasma-based edge terminations for gallium nitride power devices
ZHAO YUJI0 citations58
US12159943B2Dec 3, 2024
GaN vertical-channel junction field-effect transistors with regrown p-GaN by metal organic chemical vapor deposition (MOCVD)
ZHAO YUJI0 citations57
US11495694B2Nov 8, 2022
GaN vertical-channel junction field-effect transistors with regrown p-GaN by metal organic chemical vapor deposition (MOCVD)
ZHAO YUJI1 citations57