Inventor

HUANG HSUN-YING

TW80 patents

⚠️ This page may combine multiple inventors who share the name “HUANG HSUN-YING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HUANG HSUN-YING

TAIWAN SEMICONDUCTOR MFG CO LTD

Semiconductor device structure with a conductive feature passing through a passivation layer

Structure for standard logic performance improvement having a back-side through-substrate-via

Structure for stacked logic performance improvement

Image sensor with improved quantum efficiency surface structure

Structure for standard logic performance improvement having a back-side through-substrate-via

Image sensor device

CMOS image sensor having indented photodiode structure

Semiconductor structure and method for forming the same

Image sensor with high quantum efficiency surface structure

Wide channel gate structure and method of forming

Image sensor including light shielding layer and patterned dielectric layer

Isolation structure for reducing crosstalk between pixels and fabrication method thereof

Image sensor device and method for forming the same

Semiconductor device structure and methods of forming the same

Image sensor device

Image sensor device

Wide channel semiconductor device

Image sensor including light shielding layer and patterned dielectric layer

Method of forming image sensor device

Single photon avalanche diode

Image sensor with improved quantum efficiency surface structure

CMOS image sensor having indented photodiode structure

Image sensor with pad structure

Image sensor including light shielding layer and patterned dielectric layer

Image sensor device and method of forming the same

Structure and formation method of light sensing device

Single photon avalanche diode

Image sensor with pad structure

Structure and formation method of light sensing device

Isolation structure for reducing crosstalk between pixels and fabrication method thereof

Frontside illuminated (FSI) image sensor with a reflector

Backside illuminated image sensor device

Semiconductor device structure and methods of forming the same

Semiconductor device having a butted contact and method of forming

Semiconductor device structure and methods of forming the same

Semiconductor device having a butted contact, method of forming and method of using

Memory cells with butted contacts and method of forming same

Image sensor device

Image sensor with improved quantum efficiency surface structure

Image sensor device

Integrated chip for standard logic performance improvement having a back-side through-substrate-via and method for forming the integrated chip

Image sensor including light shielding layer and patterned dielectric layer

Semiconductor device structure with back-side layer to reduce leakage

Method for forming light-sensing device

Stacked semiconductor dies with a conductive feature passing through a passivation layer

Structure and formation method of light-sensing device

Semiconductor device structure

TAIWAN SEMICONDUCTOR MFG

Process for enhancing image quality of backside illuminated image sensor

LU SHOU-SHU

Dark current reduction for back side illuminated image sensor

WENG WEI-CHIH

Image sensor with improved dark current performance