Inventor
YOON HYUNJUN
KR10 patents
⚠️ This page may combine multiple inventors who share the name “YOON HYUNJUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
7 patentsUS11568903B2Jan 31, 2023
Page buffer circuit and memory device including the same
SAMSUNG ELECTRONICS CO LTD4 citations73
US11989082B2May 21, 2024
Non-volatile memory device, method of operating the device, and memory system including the device
SAMSUNG ELECTRONICS CO LTD2 citations71
US11507448B2Nov 22, 2022
Non-volatile memory device, method of operating the device, and memory system including the device
SAMSUNG ELECTRONICS CO LTD2 citations71
US12073909B2Aug 27, 2024
Page buffer circuit and memory device including the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US11869582B2Jan 9, 2024
Non-volatile memory device and method of incrementally programming the same using a plurality of program loops
SAMSUNG ELECTRONICS CO LTD0 citations57
US12277976B2Apr 15, 2025
Storage device, non-volatile memory, and method of operating program of non-volatile memory including counting a number of on-cells during verification
SAMSUNG ELECTRONICS CO LTD0 citations50
US12315590B2May 27, 2025
Memory device configured to reduce verification time and operating method thereof including dump operations
SAMSUNG ELECTRONICS CO LTD0 citations49