Inventor
EEH YOUNG MIN
KR22 patents
⚠️ This page may combine multiple inventors who share the name “EEH YOUNG MIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
KIOXIA CORP
11 patentsUS11329215B2May 10, 2022
Magnetic memory device
KIOXIA CORP4 citations73
US11316095B2Apr 26, 2022
Magnetic device which improves write error rate while maintaining retention properties
KIOXIA CORP3 citations73
US11404098B2Aug 2, 2022
Memory device
KIOXIA CORP3 citations72
US12501837B2Dec 16, 2025
Magnetic memory device
KIOXIA CORP0 citations62
US12048252B2Jul 23, 2024
Magnetoresistive memory device
KIOXIA CORP0 citations62
US11832528B2Nov 28, 2023
Magnetic memory device
KIOXIA CORP0 citations62
US11563168B2Jan 24, 2023
Magnetic memory device that suppresses diffusion of elements
KIOXIA CORP1 citations62
US11495740B2Nov 8, 2022
Magnetoresistive memory device
KIOXIA CORP1 citations62
US12426273B2Sep 23, 2025
Magnetoresistance memory device and method for manufacturing magnetoresistance memory device
KIOXIA CORP0 citations60
US12125510B2Oct 22, 2024
Magnetoresistance memory device
KIOXIA CORP0 citations59
US12329038B2Jun 10, 2025
Magnetoresistance memory device
KIOXIA CORP0 citations52
TOSHIBA MEMORY CORP
9 patentsUS10388343B2Aug 20, 2019
Magnetoresistive element and magnetic memory
TOSHIBA MEMORY CORP18 citations86
US11127445B2Sep 21, 2021
Magnetic device
TOSHIBA MEMORY CORP11 citations85
US10873021B2Dec 22, 2020
Magnetic device and manufacturing method of magnetic device
TOSHIBA MEMORY CORP12 citations85
US10840434B2Nov 17, 2020
Storage device
TOSHIBA MEMORY CORP13 citations85
US10468170B2Nov 5, 2019
Magnetic device
TOSHIBA MEMORY CORP12 citations84
US10199568B2Feb 5, 2019
Magnetic storage device and manufacturing method of magnetic storage device
TOSHIBA MEMORY CORP7 citations84
US11217288B2Jan 4, 2022
Magnetic device and memory device
TOSHIBA MEMORY CORP3 citations73
US10910032B2Feb 2, 2021
Magnetoresistive memory device with different write pulse patterns
TOSHIBA MEMORY CORP5 citations72
US10325640B2Jun 18, 2019
Magnetoresistive memory device with different write pulse patterns
TOSHIBA MEMORY CORP4 citations72