P

Inventor

YAO LAN

CN27 patents
⚠️ This page may combine multiple inventors who share the name “YAO LAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

YANGTZE MEMORY TECH CO LTD

24 patents
US10867678B2Dec 15, 2020

Three-dimensional memory devices

YANGTZE MEMORY TECH CO LTD8 citations84
US10680003B2Jun 9, 2020

Staircase structure for memory device

YANGTZE MEMORY TECH CO LTD6 citations83
US10672711B2Jun 2, 2020

Word line contact structure for three-dimensional memory devices and fabrication methods thereof

YANGTZE MEMORY TECH CO LTD7 citations83
US11145666B2Oct 12, 2021

Staircase structure for memory device

YANGTZE MEMORY TECH CO LTD1 citations72
US10515975B1Dec 24, 2019

Method for forming dual-deck channel hole structure of three-dimensional memory device

YANGTZE MEMORY TECH CO LTD6 citations72
US12550690B2Feb 10, 2026

Semiconductor device having shallow trench isolation structures and fabrication method thereof

YANGTZE MEMORY TECH CO LTD0 citations62
US12185536B2Dec 31, 2024

Three-dimensional memory devices with reduced cell interference and fabrication methods thereof

YANGTZE MEMORY TECH CO LTD0 citations62
US12137558B2Nov 5, 2024

Staircase structure for memory device

YANGTZE MEMORY TECH CO LTD0 citations62
US12010838B2Jun 11, 2024

Staircase structure for memory device

YANGTZE MEMORY TECH CO LTD0 citations62
US11538824B2Dec 27, 2022

Three-dimensional memory devices with improved charge confinement and fabrication methods thereof

YANGTZE MEMORY TECH CO LTD0 citations62
US11515329B2Nov 29, 2022

Three-dimensional memory device and manufacturing method thereof

YANGTZE MEMORY TECH CO LTD0 citations62
US11101276B2Aug 24, 2021

Word line contact structure for three-dimensional memory devices and fabrication methods thereof

YANGTZE MEMORY TECH CO LTD0 citations62
US11069712B2Jul 20, 2021

Three-dimensional memory device

YANGTZE MEMORY TECH CO LTD0 citations62
US12376307B2Jul 29, 2025

Semiconductor structure, fabrication method and three-dimensional memory

YANGTZE MEMORY TECH CO LTD0 citations59
US12362223B2Jul 15, 2025

Semiconductor structure, fabrication method and three-dimensional memory

YANGTZE MEMORY TECH CO LTD0 citations59
US12598965B2Apr 7, 2026

3D NAND memory device with isolation trenches and fabrication method thereof

YANGTZE MEMORY TECH CO LTD0 citations56
US10854628B2Dec 1, 2020

Three-dimensional memory device and manufacturing method thereof

YANGTZE MEMORY TECH CO LTD0 citations52
US10658379B2May 19, 2020

Array common source structures of three-dimensional memory devices and fabricating methods thereof

YANGTZE MEMORY TECH CO LTD0 citations52
US12543319B2Feb 3, 2026

Semiconductor device including reduced-size transistors, manufacturing method thereof, and NAND memory device

YANGTZE MEMORY TECH CO LTD0 citations50
US12446265B2Oct 14, 2025

Semiconductor devices and methods for manufacturing the same, and NAND memory devices

YANGTZE MEMORY TECH CO LTD0 citations50
US12507406B2Dec 23, 2025

3D memory device

YANGTZE MEMORY TECH CO LTD0 citations48
US12324198B2Jun 3, 2025

Semiconductor device and manufacture method thereof

YANGTZE MEMORY TECH CO LTD0 citations48
US12439605B2Oct 7, 2025

Semiconductor device, three-dimensional memory and method for fabricating the semiconductor device

YANGTZE MEMORY TECH CO LTD0 citations45
US12183623B2Dec 31, 2024

Semiconductor devices and methods for fabricating the same

YANGTZE MEMORY TECH CO LTD0 citations45

TOBACCO RES INSTITUTE OF HUBEI PROVINCE

1 patent

UNIV NEW YORK STATE RES FOUND

1 patent

UNIV SOOCHOW

1 patent