Inventor
SHI YANWEI
CN12 patents
⚠️ This page may combine multiple inventors who share the name “SHI YANWEI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
YANGTZE MEMORY TECH CO LTD
11 patentsUS12278209B2Apr 15, 2025
Peripheral circuit having recess gate transistors and method for forming the same
YANGTZE MEMORY TECH CO LTD0 citations62
US12089413B2Sep 10, 2024
Peripheral circuit having recess gate transistors and method for forming the same
YANGTZE MEMORY TECH CO LTD0 citations62
US12376307B2Jul 29, 2025
Semiconductor structure, fabrication method and three-dimensional memory
YANGTZE MEMORY TECH CO LTD0 citations59
US12362223B2Jul 15, 2025
Semiconductor structure, fabrication method and three-dimensional memory
YANGTZE MEMORY TECH CO LTD0 citations59
US12581649B2Mar 17, 2026
Semiconductor device, fabrication method, and memory system
YANGTZE MEMORY TECH CO LTD0 citations58
US12598965B2Apr 7, 2026
3D NAND memory device with isolation trenches and fabrication method thereof
YANGTZE MEMORY TECH CO LTD0 citations56
US12543319B2Feb 3, 2026
Semiconductor device including reduced-size transistors, manufacturing method thereof, and NAND memory device
YANGTZE MEMORY TECH CO LTD0 citations50
US12446265B2Oct 14, 2025
Semiconductor devices and methods for manufacturing the same, and NAND memory devices
YANGTZE MEMORY TECH CO LTD0 citations50
US12324198B2Jun 3, 2025
Semiconductor device and manufacture method thereof
YANGTZE MEMORY TECH CO LTD0 citations48
US12557640B2Feb 17, 2026
Three dimensional (3D) memory device and fabrication method using self-aligned multiple patterning and airgaps
YANGTZE MEMORY TECH CO LTD0 citations46
US12183623B2Dec 31, 2024
Semiconductor devices and methods for fabricating the same
YANGTZE MEMORY TECH CO LTD0 citations45