Inventor
ARAI TAKAYOSHI
JP23 patents
⚠️ This page may combine multiple inventors who share the name “ARAI TAKAYOSHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
CANON KK
21 patentsUS5038713AAug 13, 1991
Microwave plasma treating apparatus
CANON KK185 citations99
US4908330AMar 13, 1990
Process for the formation of a functional deposited film containing group IV atoms or silicon atoms and group IV atoms by microwave plasma chemical vapor deposition process
CANON KK48 citations93
US4908329AMar 13, 1990
Process for the formation of a functional deposited film containing groups II and VI atoms by microwave plasma chemical vapor deposition process
CANON KK34 citations93
US4788120ANov 29, 1988
Light receiving member for use in electrophotography having an amorphous silicon layer
CANON KK27 citations93
US4971832ANov 20, 1990
HR-CVD process for the formation of a functional deposited film on a substrate with application of a voltage in the range of -5 to -100 V
CANON KK45 citations92
US4953498ASep 4, 1990
Microwave plasma CVD apparatus having substrate shielding member
CANON KK27 citations92
US5061511AOct 29, 1991
Method for forming functional deposited films by means of microwave plasma chemical vapor deposition method
CANON KK20 citations82
US5002793AMar 26, 1991
Process for forming film in a three-chambered apparatus having two chamber faces coated with films of at least 106 Ω cm resistance
CANON KK21 citations82
US4957772ASep 18, 1990
Method for forming functional deposited films by means of microwave plasma chemical vapor deposition method
CANON KK20 citations82
US4897281AJan 30, 1990
Process for the formation of a functional deposited film by way of microwave plasma CVD method
CANON KK21 citations82
US4940642AJul 10, 1990
Electrophotographic light receiving member having polycrystalline silicon charge injection inhibition layer prepared by chemical reaction of excited precursors and A-SI:C:H surface layer
CANON KK7 citations74
US4786574ANov 22, 1988
Layered amorphous silicon containing photoconductive element having surface layer with specified optical band gap
CANON KK13 citations74
US4930442AJun 5, 1990
Microwave plasma CVD apparatus having an improved microwave transmissive window
CANON KK16 citations73
US4897284AJan 30, 1990
Process for forming a deposited film on each of a plurality of substrates by way of microwave plasma chemical vapor deposition method
CANON KK20 citations73
US5019887AMay 28, 1991
Non-single crystalline photosensor with hydrogen and halogen
CANON KK6 citations63
US4824749AApr 25, 1989
Light receiving member for use in electrophotography and process for the production thereof
CANON KK3 citations63
US4804604AFeb 14, 1989
Light receiving member for use in electrophotography
CANON KK3 citations63
US4792509ADec 20, 1988
Light receiving member for use in electrophotography
CANON KK3 citations63
US4780387AOct 25, 1988
Light receiving member for use in electrophotography comprising amorphous silicon layer and polycrystalline layer
CANON KK4 citations63
US4738913AApr 19, 1988
Light receiving member for use in electrophotography comprising surface layer of a-Si:C:H
CANON KK4 citations63
US4818655AApr 4, 1989
Electrophotographic light receiving member with surface layer of a-(Six C1-x)y :H1-y wherein x is 0.1-0.99999 and y is 0.3-0.59
CANON KK0 citations52