Inventor
ROTH SCOTT S
US29 patents
⚠️ This page may combine multiple inventors who share the name “ROTH SCOTT S”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MOTOROLA INC
23 patentsUS5219793AJun 15, 1993
Method for forming pitch independent contacts and a semiconductor device having the same
MOTOROLA INC149 citations98
US5604159AFeb 18, 1997
Method of making a contact structure
MOTOROLA INC77 citations96
US5543339AAug 6, 1996
Process for forming an electrically programmable read-only memory cell
MOTOROLA INC61 citations96
US5538922AJul 23, 1996
Method for forming contact to a semiconductor device
MOTOROLA INC74 citations96
US5455194AOct 3, 1995
Encapsulation method for localized oxidation of silicon with trench isolation
MOTOROLA INC71 citations96
US5286674AFeb 15, 1994
Method for forming a via structure and semiconductor device having the same
MOTOROLA INC86 citations96
US5272117ADec 21, 1993
Method for planarizing a layer of material
MOTOROLA INC94 citations96
US5210435AMay 11, 1993
ITLDD transistor having a variable work function
MOTOROLA INC69 citations96
US5061647AOct 29, 1991
ITLDD transistor having variable work function and method for fabricating the same
MOTOROLA INC61 citations96
US5583360ADec 10, 1996
Vertically formed neuron transister having a floating gate and a control gate
MOTOROLA INC62 citations94
US5480820AJan 2, 1996
Method of making a vertically formed neuron transistor having a floating gate and a control gate and a method of formation
MOTOROLA INC61 citations94
US5616941AApr 1, 1997
Electrically programmable read-only memory cell
MOTOROLA INC24 citations93
US5445107AAug 29, 1995
Semiconductor device and method of formation
MOTOROLA INC32 citations93
US5118639AJun 2, 1992
Process for the formation of elevated source and drain structures in a semiconductor device
MOTOROLA INC49 citations93
US5246537ASep 21, 1993
Method of forming recessed oxide isolation
MOTOROLA INC25 citations92
US5126285AJun 30, 1992
Method for forming a buried contact
MOTOROLA INC29 citations89
US4927780AMay 22, 1990
Encapsulation method for localized oxidation of silicon
MOTOROLA INC38 citations88
US5374572ADec 20, 1994
Method of forming a transistor having an offset channel section
MOTOROLA INC19 citations80
US4662956AMay 5, 1987
Method for prevention of autodoping of epitaxial layers
MOTOROLA INC23 citations75
US5374573ADec 20, 1994
Method of forming a self-aligned thin film transistor
MOTOROLA INC6 citations74
US5308997AMay 3, 1994
Self-aligned thin film transistor
MOTOROLA INC3 citations63
USRE35294EJul 9, 1996
Polysilicon encapsulated localized oxidation of silicon
MOTOROLA INC4 citations62
US5814868ASep 29, 1998
Transistor having an offset channel section
MOTOROLA INC2 citations61