Inventor

SHIOMI TORU

JP16 patents

⚠️ This page may combine multiple inventors who share the name “SHIOMI TORU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MITSUBISHI ELECTRIC CORP

15 patents

US5124589AJun 23, 1992

Semiconductor integrated circuit capable of synchronous and asynchronous operations and operating method therefor

MITSUBISHI ELECTRIC CORP172 citations99

US6385081B1May 7, 2002

Output driver circuit for restraining generation of noise and semiconductor memory device utilizing such circuit

MITSUBISHI ELECTRIC CORP36 citations91

US6314037B1Nov 6, 2001

Semiconductor integrated circuit device using BiCMOS technology

MITSUBISHI ELECTRIC CORP12 citations74

US5225717AJul 6, 1993

BiCMOS input buffer circuit operable at high speed under less power consumption

MITSUBISHI ELECTRIC CORP16 citations74

US5687111ANov 11, 1997

Static type semiconductor memory device capable of operating at a low voltage and reducing a memory cell area

MITSUBISHI ELECTRIC CORP15 citations73

US5359553AOct 25, 1994

Low power ECL/MOS level converting circuit and memory device and method of converting a signal level

MITSUBISHI ELECTRIC CORP11 citations73

US5095355AMar 10, 1992

Bipolar cross-coupled memory cells having improved immunity to soft errors

MITSUBISHI ELECTRIC CORP16 citations73

US5013936AMay 7, 1991

BiCMOS logic circuit using complementary bipolar transistors having their emitters connected together

MITSUBISHI ELECTRIC CORP12 citations73

US4897820AJan 30, 1990

Bi-CMOS type of semiconductor memory device

MITSUBISHI ELECTRIC CORP10 citations73

US6466506B2Oct 15, 2002

Semiconductor memory device capable of repairing small leak failure

MITSUBISHI ELECTRIC CORP3 citations62

US6272058B1Aug 7, 2001

Semiconductor memory device capable of performing data reading/writing in units of plurality of bits

MITSUBISHI ELECTRIC CORP2 citations62

US4791382ADec 13, 1988

Driver circuit

MITSUBISHI ELECTRIC CORP6 citations62

RENESAS TECH CORP

1 patent

US6818983B2Nov 16, 2004

Semiconductor memory chip and semiconductor memory device using the same

RENESAS TECH CORP7 citations73

SHIOMI TORU

MITSUBISHI ELECTRIC CORP

Semiconductor integrated circuit capable of synchronous and asynchronous operations and operating method therefor

Semiconductor integrated circuit

Semiconductor integrated circuit device using BiCMOS technology

Semiconductor memory device capable of driving divided word lines at high speed

Output driver circuit for restraining generation of noise and semiconductor memory device utilizing such circuit

Semiconductor integrated circuit device using BiCMOS technology

BiCMOS input buffer circuit operable at high speed under less power consumption

Static type semiconductor memory device capable of operating at a low voltage and reducing a memory cell area

Low power ECL/MOS level converting circuit and memory device and method of converting a signal level

Bipolar cross-coupled memory cells having improved immunity to soft errors

BiCMOS logic circuit using complementary bipolar transistors having their emitters connected together

Bi-CMOS type of semiconductor memory device

Semiconductor memory device capable of repairing small leak failure

Semiconductor memory device capable of performing data reading/writing in units of plurality of bits

Driver circuit

RENESAS TECH CORP

Semiconductor memory chip and semiconductor memory device using the same