Inventor
KWAK JIN-SEOK
KR25 patents
⚠️ This page may combine multiple inventors who share the name “KWAK JIN-SEOK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
18 patentsUS6762620B2Jul 13, 2004
Circuit and method for controlling on-die signal termination
SAMSUNG ELECTRONICS CO LTD201 citations99
US7092299B2Aug 15, 2006
Memory devices, systems and methods using selective on-die termination
SAMSUNG ELECTRONICS CO LTD31 citations92
US6992506B2Jan 31, 2006
Integrated circuit devices having data inversion circuits therein with multi-bit prefetch structures and methods of operating same
SAMSUNG ELECTRONICS CO LTD17 citations92
US6643215B2Nov 4, 2003
Synchronous memory devices with synchronized latency control circuits and methods of operating same
SAMSUNG ELECTRONICS CO LTD23 citations92
US6256245B1Jul 3, 2001
Precharging apparatus and method in a semiconductor memory device
SAMSUNG ELECTRONICS CO LTD20 citations92
US7289385B2Oct 30, 2007
Bank selection signal control circuit for use in semiconductor memory device, and bank selection control method
SAMSUNG ELECTRONICS CO LTD16 citations84
US7200069B2Apr 3, 2007
Semiconductor memory device having external data load signal synchronous with data strobe signal and serial-to-parallel data prefetch method thereof
SAMSUNG ELECTRONICS CO LTD11 citations84
US6788106B2Sep 7, 2004
Integrated circuit devices having data inversion circuits therein that reduce simultaneous switching noise and support interleaving of parallel data
SAMSUNG ELECTRONICS CO LTD17 citations84
US6320801B1Nov 20, 2001
Redundancy circuit and redundancy method for semiconductor memory device
SAMSUNG ELECTRONICS CO LTD15 citations84
US6337822B1Jan 8, 2002
Write masking in a semiconductor memory device
SAMSUNG ELECTRONICS CO LTD19 citations80
US7408482B2Aug 5, 2008
Integrated circuit devices having data inversion circuits therein with multi-bit prefetch structures and methods of operating same
SAMSUNG ELECTRONICS CO LTD6 citations74
US6631090B1Oct 7, 2003
Circuit and method for data output in synchronous semiconductor device
SAMSUNG ELECTRONICS CO LTD7 citations74
US6590814B1Jul 8, 2003
Semiconductor memory device and redundancy method thereof
SAMSUNG ELECTRONICS CO LTD8 citations74
US5848016ADec 8, 1998
Merged Memory and Logic (MML) integrated circuits and methods including serial data path comparing
SAMSUNG ELECTRONICS CO LTD7 citations74
US7366822B2Apr 29, 2008
Semiconductor memory device capable of reading and writing data at the same time
SAMSUNG ELECTRONICS CO LTD6 citations63
US6175524B1Jan 16, 2001
Merged memory and logic (MML) integrated circuit devices including buffer memory and methods of detecting errors therein
SAMSUNG ELECTRONICS CO LTD5 citations63
US6052320AApr 18, 2000
Integrated circuit memory devices having highly integrated merged data test capability and methods of testing same
SAMSUNG ELECTRONICS CO LTD6 citations63
US8023346B2Sep 20, 2011
Semiconductor memory device including signal controller connected between memory blocks
SAMSUNG ELECTRONICS CO LTD0 citations52