Inventor
WU BING-CHANG
TW15 patents
Patents
15 patentsUS6900541B1May 31, 2005
Semiconductor chip capable of implementing wire bonding over active circuits
UNITED MICROELECTRONICS CORP68 citations97
US7071575B2Jul 4, 2006
Semiconductor chip capable of implementing wire bonding over active circuits
UNITED MICROELECTRONICS CORP22 citations92
US6277729B1Aug 21, 2001
Method of manufacturing transistor barrier layer
UNITED MICROELECTRONICS CORP22 citations91
US7372168B2May 13, 2008
Semiconductor chip capable of implementing wire bonding over active circuits
UNITED MICROELECTRONICS CORP15 citations83
US7304385B2Dec 4, 2007
Semiconductor chip capable of implementing wire bonding over active circuits
UNITED MICROELECTRONICS CORP12 citations83
US7208837B2Apr 24, 2007
Semiconductor chip capable of implementing wire bonding over active circuits
UNITED MICROELECTRONICS CORP9 citations73
US7056796B2Jun 6, 2006
Method for fabricating silicide by heating an epitaxial layer and a metal layer formed thereon
UNITED MICROELECTRONICS CORP8 citations73
US6482739B2Nov 19, 2002
Method for decreasing the resistivity of the gate and the leaky junction of the source/drain
UNITED MICROELECTRONICS CORP11 citations73
US7274108B2Sep 25, 2007
Semiconductor chip capable of implementing wire bonding over active circuits
UNITED MICROELECTRONICS CORP5 citations62
US7212396B2May 1, 2007
Method for fabricating a thin film resistor
UNITED MICROELECTRONICS CORP4 citations62
US6235566B1May 22, 2001
Two-step silicidation process for fabricating a semiconductor device
UNITED MICROELECTRONICS CORP6 citations62
US6184118B1Feb 6, 2001
Method for preventing the peeling of the tungsten metal after the metal-etching process
UNITED MICROELECTRONICS CORP5 citations62
US6010958AJan 4, 2000
Method for improving the planarization of dielectric layer in the fabrication of metallic interconnects
UNITED MICROELECTRONICS CORP6 citations62
US7250670B2Jul 31, 2007
Semiconductor structure and fabricating method thereof
UNITED MICROELECTRONICS CORP0 citations52
US6300189B1Oct 9, 2001
Method for forming a metal capacitor
UNITED MICROELECTRONICS CORP1 citations51